Method and apparatus for thinning wafer

1. A method for thinning a wafer, comprising:

irradiating a line beam focused at a specific depth of a wafer on a surface opposite to a surface on which a circuit is disposed;

scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer; and

cleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer.

2. The method of claim 1 , wherein the irradiating of the line beam includes: irradiating a laser beam; and

shaping the laser beam to generate the line beam.

3. A method for thinning a wafer, comprising:

irradiating a line beam focused at a specific depth of a wafer;

scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer; and

cleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer,

wherein the forming of the interface includes:

adjusting at least one of a scan rate of the line beam or an intensity of the line beam; and

forming grid pattern lines at the specific depth of the wafer.

4. The method of claim 1 , further comprising: forming a circuit pattern on the dummy wafer and recycling the dummy wafer.