Techniques for providing a direct injection semiconductor memory device
Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a direct injection semiconductor memory device including a first region coupled to a source line, a second region coupled to a bit line. The direct injection semiconductor memory device may also include a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region. The direct injection semiconductor memory device may further include a third region coupled to a carrier injection line configured to inject charges into the body region through the second region.
1. A semiconductor memory device comprising:
a first region coupled to a source line;
a second region coupled to a bit line;
a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region; and
a third region coupled to a carrier injection line configured to inject charges into the body region through the second region;
wherein the first region, the second region, the body region, and the third region are disposed in a sequential contiguous configuration extending substantially vertical from a horizontal surface plane defined by at least a substrate.
2. The semiconductor memory device according to claim 1 , wherein the first region, the body region, and the second region form a first bipolar transistor.
3. The semiconductor memory device according to claim 2 , wherein the body region, the second region, and the third region form a second bipolar transistor.
4. The semiconductor memory device according to claim 1 , wherein the bit line extends from the second region parallel to the source line.
5. The semiconductor memory device according to claim 1 , wherein the word line extends from near the body region parallel to the carrier injection line.
6. The semiconductor memory device according to claim 1 , further comprises a fourth region disposed between the third region and the substrate.
7. The semiconductor memory device according to claim 6 , wherein the fourth region is an N-doped region and the substrate is a P-type substrate.
8. The semiconductor memory device according to claim 1 , wherein the first region and the second region are N-doped regions.
9. The semiconductor memory device according to claim 1 , wherein the body region and the third region are P-doped regions.
10. A method for providing a semiconductor memory device comprising the steps of:
coupling a first region to a source line;
coupling a second region to a bit line;
coupling a body region spaced apart from and capacitively to a word line, wherein the body region is electrically floating and disposed between the first region and the second region; and
coupling a third region to a carrier injection line configured to inject charges into the body region through the second region;
wherein the first region, the second region, the body region, and the third region are disposed in a sequential contiguous configuration extending substantially vertical from a horizontal surface plane defined by at least a substrate.
11. The method according to claim 10 , further comprising increasing a voltage potential applied to at least one of the first region via the source line and the second region via the bit line from a voltage potential applied to the at least one of the first region and the second region during a hold operation to prepare for an active operation.
12. The method according to claim 10 , further comprising increasing a voltage potential applied to the word line from a voltage potential applied to the word line during a hold operation to perform at least one of a read operation and a write logic low operation.
13. The method according to claim 10 , further comprising lowering a voltage potential applied to the word line from a voltage potential applied to the word line during a write logic low operation to perform a write logic high operation.
14. The method according to claim 10 , further comprising increasing a voltage potential applied to the third region via the carrier injection line from a voltage potential applied to the third region during a hold operation to perform a write logic high operation.
15. The method according to claim 14 , further comprising increasing a voltage potential applied to the second region via the bit line from a voltage potential applied during a holding operation in order to mask the write logic high operation.
16. The method according to claim 10 , further comprising increasing a voltage potential applied to the first region via the source line from a voltage potential applied to the first region during a hold operation to perform a write logic high operation.
17. The method according to claim 10 , further comprising increasing a voltage potential applied to the first region via the source line from a voltage potential applied to the first region during a hold operation to perform a masking operation.
18. The method according to claim 17 , further comprising increasing a voltage potential applied to the second region via the bit line from a voltage potential applied to the second region during a hold operation to perform a masking operation.
19. The method according to claim 18 , wherein the voltage potential applied to the first region via the source line or the second region via the bit line is higher than a voltage potential applied to the word line.
20. The method according to claim 19 , wherein the voltage potential applied to the first region via the source line or the second region via the bit line is higher than the voltage potential applied to the third region during a write logic high operation.