Threshold logic gates with resistive networks
This disclosure relates generally to threshold logic elements for integrated circuits (ICs). In one embodiment, a threshold logic element has a first input gate network, a second input gate network, a differential sense amplifier, and a resistive network. The first input gate network is configured to receive a first set of logical signals, while the second input gate network configured to receive a second set of logical signals. The differential sense amplifier is operably associated with the first input gate network and the second input gate network such that the differential sense amplifier is configured to generate a differential output in accordance with a threshold logic function. The resistive network is coupled between the differential sense amplifier and the first input gate network and between the differential sense amplifier and the second input gate network. The resistive network makes the threshold logic element less susceptible to process variations.
1. A threshold logic element comprising:
a first input gate network configured to receive a first set of logical signals;
a second input gate network configured to receive a second set of logical signals;
a differential sense amplifier operably associated with the first input gate network and the second input gate network such that the differential sense amplifier is configured to generate a differential output in accordance with a threshold logic function; and
a resistive network coupled between the differential sense amplifier and the first input gate network and between the differential sense amplifier and the second input gate network.
2. The threshold logic element of claim 1 wherein the resistive network comprises a resistive element.
3. The threshold logic element of claim 2 wherein the resistive element comprises a resistive read only memory (RROM) device.
4. The threshold logic element of claim 2 wherein the first input gate network comprises a transmission gate configured to receive a first one of the first set of logical inputs and wherein the transmission gate is coupled in series with the resistive element.
5. The threshold logic element of claim 4 wherein the resistive element has a resistance such that the transmission gate operates in a linear region during an evaluation state of the threshold logic element.
6. The threshold logic element of claim 5 wherein the transmission gate is a field effect transistor.
7. The threshold logic element of claim 6 wherein the resistive element comprises a resistive read only memory (RROM) device.
8. The threshold logic element of claim 7 wherein the RROM device comprises an RROM cell having a first electrode coupled to the differential sense amplifier, a second electrode coupled to the transmission gate, and an insulator layer between the first electrode and the second electrode.
9. The threshold logic element of claim 8 wherein the RROM device further comprises:
a first selector coupled to the first electrode and configured such that transmitting a positive pulse into the first selector provides the RROM cell in a low resistance state; and
a second selector coupled to the second electrode and configured such that transmitting a negative pulse into the second selector provides the RROM cell in a high resistance state.
10. The threshold logic element of claim 9 wherein the high resistance state is at least 100 kiloohms.
11. The threshold logic element of claim 2 wherein the second input gate network comprises a transmission gate configured to receive a first one of the second set of logical inputs and wherein the transmission gate is coupled in series with the resistive element.
12. The threshold logic element of claim 11 wherein the resistive element has a resistance such that the transmission gate operates in a linear region during an evaluation state of the threshold logic element.
13. The threshold logic element of claim 12 wherein the transmission gate is a field effect transistor.
14. The threshold logic element of claim 13 wherein the resistive element comprises a resistive read only memory (RROM) device.
15. The threshold logic element of claim 13 wherein the RROM device comprises an RROM cell having a first electrode coupled to the differential sense amplifier, a second electrode coupled to the transmission gate, and an insulator layer between the first electrode and the second electrode.
16. The threshold logic element of claim 15 wherein the RROM device further comprises:
a first selector coupled to the first electrode and configured such that transmitting a positive pulse into the first selector provides the RROM cell in a low resistance state; and
a second selector coupled to the second electrode and configured such that transmitting a negative pulse into the second selector provides the RROM cell in a high resistance state.
17. The threshold logic element of claim 16 wherein the high resistance state is at least 100 kiloohms.
18. The threshold logic element of claim 1 wherein the differential sense amplifier comprises
a first amplifier branch operably associated with the first input gate network; and
a second amplifier branch operably associated with the second input gate network.
19. The threshold logic element of claim 18 wherein the differential sense amplifier is configured to generate the differential output based on a current race between the first amplifier branch and the second amplifier branch during an evaluation state.
20. The threshold logic element of claim 19 wherein the differential sense amplifier presets an output of the first amplifier branch to a first logic state and presets an output of the second amplifier branch to a second logic state during a reset state.