Granted Patent B2

US 9,664,832 · App. 14/793,123 · Granted May 30, 2017

Inventor: Debasish Banerjee (Ann Arbor, MI)

Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.

G02B5/286G02B1/10G02B5/0825G02B5/0858G02B5/207

Abstract

Claims (31)

1. An omnidirectional high chroma red structural color comprising:

a multilayer stack having:

a reflective core layer;

a semiconductor absorber layer extending across said reflective core layer;

a dielectric absorber layer extending across said semiconductor absorber layer; and

a high index of refraction dielectric layer extending across said dielectric absorber layer, said high index of refraction dielectric layer having a thickness D that obeys the relation 0.1 QW<D≦4 QW where QW is a quarter wave thickness for a target wavelength, said target wavelength having a predefined hue between 0-40° on an a*b* Lab color map;

said multilayer stack reflecting a single band of visible light with said predefined hue between 0-40° on said a*b* Lab color map, said single band of visible light having a hue shift within said predefined hue between 0-40° on said a*b* Lab color map when viewed from all angles between 0-45° normal to an outer surface of said multilayer stack.

2. The omnidirectional high chroma red structural color of claim 1 , wherein said hue is between 10-30° and said hue shift is within said 10-30° on said a*b* Lab color map.

3. The omnidirectional high chroma red structural color of claim 1 , wherein said reflective core layer has a thickness between 50-200 nanometers, inclusive.

4. The omnidirectional high chroma red structural color of claim 3 , wherein said reflective core layer is made from a reflective metal selected from the group consisting of Al, Ag, Pt, Sn and combinations thereof.

5. The omnidirectional high chroma red structural color of claim 3 , wherein said reflective core layer is made from a colorful metal selected from the group consisting of Au, Cu, brass, bronze and combinations thereof.

6. The omnidirectional high chroma red structural color of claim 1 , wherein said semiconductor absorber layer has a thickness between 5-500 nanometers, inclusive.

7. The omnidirectional high chroma red structural color of claim 6 , wherein said semiconductor absorber layer is made from the group consisting of amorphous Si, Ge and combinations thereof.

8. The omnidirectional high chroma red structural color of claim 1 , wherein said dielectric absorber layer has a thickness between 5-500 nanometers, inclusive.

9. The omnidirectional high chroma red structural color of claim 8 , wherein said dielectric absorber layer is made from Fe 2 O 3 .

10. The omnidirectional high chroma red structural color of claim 1 , wherein said high index of refraction dielectric layer is made from a dielectric material selected from the group consisting of ZnS, TiO 2 , HfO 2 , Nb 2 O 5 , Ta 2 O 5 and combinations thereof.

11. The omnidirectional high chroma red structural color of claim 1 , wherein said reflective core layer is a central reflective core layer and said semiconductor absorber layer is a pair of semiconductor absorber layers extending across opposite sides of said central reflective core layer, said central reflective core layer sandwiched between said pair of semiconductor absorber layers.

12. The omnidirectional high chroma red structural color of claim 11 , wherein said dielectric absorber layer is a pair of dielectric absorber layers, said central reflective core layer and said pair of semiconductor absorber layers sandwiched between said pair of high dielectric absorber layers.

13. The omnidirectional high chroma red structural color of claim 1 , wherein said high index of refraction dielectric layer is a pair of high index of refraction dielectric layers, said central reflective core layer and said pair of semiconductor absorber layers and said pair of dielectric absorber layers sandwiched between said pair of high dielectric absorber layers.

14. A process for making an omnidirectional high chroma red structural color, the process comprising:

manufacturing a multilayer stack by:

dry depositing a reflective core layer;

dry depositing a semiconductor absorber layer that extends across the reflective core layer;

dry or wet depositing a dielectric absorber layer that extends across the semiconductor absorber layer; and

dry or wet depositing a high index of refraction dielectric layer that extends across the dielectric absorber layer, the high index of refraction dielectric layer having a thickness D that obeys the relation 0.1 QW<D≦4 QW where QW is a quarter wave thickness for a target wavelength having a predefined hue between 0-40° on an a*b* Lab color map;

the multilayer stack reflecting visible light with the predefined hue between 0-40° on the a*b* Lab color map and having a hue shift within the predefined hue between 0-40° on the a*b* Lab color map when viewed from all angles between 0-45° normal to an outer surface of the multilayer stack.

15. The process of claim 14 , wherein the reflective core layer has a thickness between 50-200 nanometers, inclusive.

16. The process of claim 15 , wherein said reflective core layer is made from a reflective metal selected from the group consisting of Al, Ag, Pt, Sn and combinations thereof.

17. The process of claim 15 , wherein the reflective core layer is made from a colorful metal selected from the group consisting of Au, Cu, brass, bronze and combinations thereof.

18. The process of claim 14 , wherein the semiconductor absorber layer has a thickness between 5-500 nanometers, inclusive, and is made from the group consisting of amorphous Si, Ge and combinations thereof.

19. The process of claim 14 , wherein the dielectric absorber layer has a thickness between 5-500 nanometers, inclusive, and is made from Fe 2 O 3 .

Assignments (2)

Continuity (9)