Photo sensor module
View Patent ↗The present disclosure relates to a photo sensor module. The thickness and size of an IC chip may be reduced by manufacturing a photo sensor based on a semiconductor substrate and improving the structure to place a UV sensor on the upper section of an active device or a passive device. The photo sensor module includes a semiconductor substrate, a field oxide layer, formed on the semiconductor substrate, and a photo sensor comprising a photo diode formed on the field oxide layer.
1. A photo sensor module comprising:
a semiconductor substrate;
a field oxide layer, disposed on the semiconductor substrate;
a photo sensor comprising a photo diode formed on the field oxide layer; and
an insulator film disposed on the field oxide layer and the photosensor;
wherein a part of the insulator film is removed and a part of the photo diode is exposed to outside.
2. The photo sensor module of claim 1 , further comprising:
a first WELL region and a second WELL region disposed on the semiconductor substrate;
a first source/drain region disposed on the first WELL region and a second source/drain region disposed on the second WELL region;
an isolation layer disposed between the first WELL region and the second WELL region; and
a first gate insulator film disposed on the first WELL region and a second gate insulator film disposed on the second WELL region.
3. The photo sensor module of claim 2 , further comprising:
a passivation layer disposed on the insulator film.
4. The photo sensor module of claim 3 , wherein:
a part of the passivation layer is removed.
5. The photo sensor module of claim 1 , wherein the photo diode comprises two or more doping region formed in a module form to sense UV.
6. The photo sensor module of claim 1 , wherein the photo diode comprises:
a first doping region of high concentration;
a second doping region of low concentration, doped in a different impurity type from the first doping region; and
a third doping region of high concentration, doped in an identical impurity type as the second doping region.
7. The photo sensor module of claim 1 , wherein the photo diode comprises:
a first doping region of high concentration;
a second doping region of low concentration doped in an identical impurity type as the first doping region; and
a third doping region of high concentration doped in different impurity type from the second doping region.