Nanocavity monolayer laser monolithically integrated with LED pump
A laser structure includes a substrate, a buffer layer formed on the substrate and a light emitting diode (LED) formed on the buffer layer. A photonic crystal layer is formed on the LED. A monolayer semiconductor nanocavity laser is formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED, wherein the LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.
1. A laser structure including a nanocavity laser and light emitting diode (LED) monolithically formed within the laser structure, comprising:
a substrate including at least one of silicon (Si) and germanium (Ge);
a buffer layer including a III-V material and having a first surface finned directly on the substrate, the buffer layer including an interface material to reduce dislocation defects due to lattice mismatch between the at least one of Si and Ge of the substrate and the III-V material of the buffer layer;
a light emitting diode (LED) formed directly on a second surface of the buffer layer;
a photonic crystal layer formed on the LED; and
a nanocavity laser including a monolayer of a transition metal dichalcogenide formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED to optically pump the nanocavity laser, the transition metal dichalcogenide having a chemical formula of MX 2 , where M is selected from the group consisting of: W and Mo and X is selected from the group consisting of: S, Se and Te, wherein the buffer layer reduces the dislocation defects to allow for the formation of the LED within the laser structure.
2. The laser structure as recited in claim 1 , wherein the transition metal dichalcogenide is WSe 2 .
3. The laser structure as recited in claim 1 , wherein the LED includes a III-V material.
4. The laser structure as recited in claim 1 , wherein the photonic crystal layer includes SiO 2 and the LED produces visible light.
5. The laser structure as recited in claim 1 , wherein the light from the LED is received by the monolayer of the transition metal dichalcogenide at a given power to enable the laser to produce laser light by optically pumping the laser at the given power in order to achieve at least a threshold value corresponding to the monolayer of the transition metal dichalcogenide.
6. The laser structure as recited in claim 1 , wherein the LED includes a transparent substrate LED.
7. The laser structure as recited in claim 1 , wherein the LED includes AlGaAs or AlGaInP material.
8. The laser structure as recited in claim 1 , wherein the substrate includes a semiconductor-on-insulator substrate including at least one of Si and Ge.
9. The laser structure as recited in claim 5 , wherein the thresholds value is about 100 mW/mm 2 .
10. The laser structure as recited in claim 9 , wherein the given power is about 25 mW.
11. The laser structure as recited in claim 10 , wherein the given power is achieved using an injection current of about 40 mA.
12. A laser structure including a nanocavity laser and light emitting diode (LED) monolithically formed within the laser structure, comprising:
a substrate including at least one of silicon (Si) and germanium (Ge);
a buffer layer including a III-V material and having a first surface formed directly on the substrate, the buffer layer including an interface material to reduce dislocation defects due to lattice mismatch between the at least one of Si and Ge of the substrate and the III-V material of the buffer layer;
a light emitting diode (LED) including AlGaAs or AlGaInP formed directly on a second surface of the buffer layer;
a photonic crystal layer formed on the LED; and
a nanocavity laser including a monolayer of WSe 2 formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED to optically pump the nanocavity laser, wherein the buffer layer reduces the dislocation defects to allow for the formation of the LED within the laser structure.
13. The laser structure as recited in claim 12 , wherein the photonic crystal layer includes SiO 2 and the LED produces visible light.
14. The laser structure as recited in claim 12 , wherein the light from the LED is received by the monolayer of WSe 2 at a given power to enable the laser to produce laser light by optically pumping the laser at the given power in order to achieve at least a threshold valve corresponding to the monolayer of WSe 2 .
15. The laser structure as recited in claim 14 , wherein the threshold value is about 100 mW/mm 2 and the given power is about 25 mW.
16. The laser structure as recited in claim 15 , wherein the given power is achieved using an injection current of about 40 mA.
17. The laser structure as recited in claim 12 , wherein LED includes a transparent substrate LED.
18. The laser structure as recited in claim 12 , wherein the substrate includes a semiconductor-on-insulator substrate including at least one of Si and Ge.