IP Library › Granted Patent US 10,269,492
Granted Patent B2
US 10,269,492 · App. 14/799,461 · Granted Apr 23, 2019

Multilayer ceramic electronic component and method of manufacturing the same

Inventors: Kum Jin Park (Suwon-Si, KR); Chang Hak Choi (Suwon-Si, KR); Chi Hwa Lee (Suwon-Si, KR); Min Gi Sin (Suwon-Si, KR); Woo Sup Kim (Suwon-Si, KR); Jong Hoon Yoo (Suwon-Si, KR)
Assignee: Samsung Electro-Mechanics Co., Ltd.
H01G4/30C04B35/4682H01G4/12H01G4/1227C04B2235/3208C04B2235/3224C04B2235/5454C04B2235/6025
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Quick Facts
Patent No.
US 10,269,492
App. No.
14/799,461
Granted
Apr 23, 2019
Kind
B2
Abstract

A multilayer ceramic electronic component and a method of manufacturing the same are provided. The multilayer ceramic electronic component includes: a ceramic body including dielectric layers; and internal electrodes disposed on the dielectric layers within the ceramic body and containing a ceramic material trapped therein. The ceramic material is a dielectric material doped with an additive.

Claims (50)

1. A multilayer ceramic electronic component comprising:

a plurality of dielectric layers non-uniformly containing a first additive; and

internal electrodes disposed on the dielectric layers and containing a ceramic material trapped therein,

wherein the ceramic material is a dielectric material doped with a second additive including a rare earth element.

2. The multilayer ceramic electronic component of claim 1 , wherein the dielectric material is a barium titanate-based dielectric material doped with the second additive.

3. The multilayer ceramic electronic component of claim 1 , wherein the second additive includes at least one selected from the group consisting of calcium (Ca), valence acceptor elements, and rare earth elements in addition to the rare earth element.

4. The multilayer ceramic electronic component of claim 1 , wherein the dielectric material is co-doped with calcium (Ca) and more than one valence acceptor element.

5. The multilayer ceramic electronic component of claim 1 , wherein the dielectric material is co-doped with at least one valence acceptor element and the rare earth element.

6. The multilayer ceramic electronic component of claim 1 , wherein the dielectric material is co-doped with calcium (Ca) and the rare earth element.

7. The multilayer ceramic electronic component of claim 1 , wherein the dielectric material is co-doped with calcium (Ca), at least one valence acceptor element, the rare earth element.

8. The multilayer ceramic electronic component of claim 1 , wherein the first additive is the same as the second additive, and an average concentration of the second additive contained in the ceramic material is higher than that of the first additive contained in the dielectric layer.

9. The multilayer ceramic electronic component of claim 1 , wherein the first additive is the same as the second additive, and a content of the first additive is higher in portions of the dielectric layer adjacent the internal electrodes than in a central portion of the dielectric layer in a thickness direction thereof.

10. The multilayer ceramic electronic component of claim 1 , wherein a cross-sectional area of the internal electrodes occupied by the ceramic material is 3% to 20% of an overall cross-sectional area of the internal electrodes.

11. The multilayer ceramic electronic component of claim 1 , wherein the ceramic material has an average particle size of 1 to 200 nm.

12. A multilayer ceramic electronic component comprising:

a ceramic body including dielectric layers; and

internal electrodes disposed on the dielectric layers within the ceramic body and containing a rare earth element doped ceramic material trapped therein,

wherein an additive in the dielectric layer has a concentration gradient in a thickness direction of the dielectric layer.

13. The multilayer ceramic electronic component of claim 12 , wherein the dielectric layer includes interface portions adjacent the internal electrodes and a central portion disposed between the interface portions, and

a concentration of the additive is higher in the interface portions than in the central portion.

14. The multilayer ceramic electronic component of claim 12 , wherein a concentration of the additive is gradually decreased from portions of the dielectric layer adjacent interfaces between the dielectric layer and the internal electrodes toward a central portion of the dielectric layer in the thickness direction thereof.

15. The multilayer ceramic electronic component of claim 12 , wherein the additive includes at least one selected from the group consisting of calcium (Ca), valence acceptor elements, and rare earth elements including the rare earth element in the internal electrodes.

16. The multilayer ceramic electronic component of claim 12 , wherein the ceramic material is a dielectric material doped with the rare earth element.

17. The multilayer ceramic electronic component of claim 12 , wherein the ceramic material is a barium titanate-based dielectric material doped with the rare earth element.

18. The multilayer ceramic electronic component of claim 12 , wherein the ceramic material is a dielectric material doped with at least one selected from the group consisting of calcium (Ca), valence acceptor elements, and rare earth elements in addition to the rare earth element in the internal electrodes.

19. The multilayer ceramic electronic component of claim 12 , wherein the ceramic material is a dielectric material doped with the rare earth element, and an average concentration of the rare earth element contained in the ceramic material is higher than that of the additive contained in the dielectric layer.

20. The multilayer ceramic electronic component of claim 12 , wherein a cross-sectional area of the internal electrodes occupied by the ceramic material is equal to 3% to 20% of an overall cross-sectional area of the internal electrodes.

21. The multilayer ceramic electronic component of claim 12 , wherein the ceramic material has an average particle size of 1 to 200 nm.

22. A multilayer ceramic electronic component comprising:

a plurality of dielectric layers; and

internal electrodes disposed on the dielectric layers and containing a ceramic material trapped therein,

wherein the dielectric layer and the ceramic material contain a doping additive including a rare earth element, and the doping additive is non-uniformly contained in the dielectric layer, and

an average concentration of the doping additive contained in the ceramic material is higher than that of the doping additive contained in the dielectric layer.

23. The multilayer ceramic electronic component of claim 22 , wherein the ceramic material is a dielectric material doped with the doping additive.

24. The multilayer ceramic electronic component of claim 22 , wherein the dielectric layer includes interface portions adjacent the internal electrodes and a central portion disposed between the interface portions, and

a concentration of the doping additive is higher in the interface portions than in the central portion.

25. The multilayer ceramic electronic component of claim 22 , wherein the doping additive includes at least one selected from the group consisting of calcium (Ca), valence acceptor elements, and rare earth elements in addition to the rare earth element.

26. A multilayer ceramic electronic component comprising:

a plurality of dielectric layers non-uniformly containing a first additive,

wherein the dielectric layers comprise a plurality of grains having a core-shell structure; and

internal electrodes disposed on the dielectric layers and containing a ceramic material trapped therein,

wherein the ceramic material is a dielectric material doped with a second additive including a rare earth element.

27. The multilayer ceramic electronic component of claim 26 , wherein a content of the first additive in the dielectric grains is higher in shell portions of the core-shell structures than a content of the first additive in core portions of the core-shell structures.

28. The multilayer ceramic electronic component of claim 26 , wherein the first additive is the same as the second additive.

29. The multilayer ceramic electronic component of claim 28 , wherein the first additive includes at least one selected from the group consisting of calcium (Ca), valence acceptor elements, and rare earth elements in addition to the rare earth element.

30. The multilayer ceramic electronic component of claim 28 , wherein an average concentration of the second additive contained in the ceramic material is higher than that of the first additive contained in the dielectric layer.

31. The multilayer ceramic electronic component of claim 28 , wherein a content of the first additive is higher in portions of the dielectric layer adjacent the internal electrodes than in a central portion of the dielectric layer in a thickness direction thereof.

32. The multilayer ceramic electronic component of claim 26 , wherein a cross-sectional area of the internal electrodes occupied by the ceramic material is 3% to 20% of an overall cross-sectional area of the internal electrodes.

33. The multilayer ceramic electronic component of claim 26 , wherein the ceramic material has an average particle size of 1 to 200 nm.

34. The multilayer ceramic electronic component of claim 26 , wherein each dielectric layer consists of a single layer of dielectric grains.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2015
From: PARK, KUM JIN; CHOI, CHANG HAK; LEE, CHI HWA; SIN, MIN GI; KIM, WOO SUP; YOO, JONG HOON
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 036104/0993 →
Priority Claims (1)
KR 10-2014-0187399 · Dec 23, 2014 · national
Continuity (1)
Related Publication 20160181019A1 · Jun 23, 2016