MEMS device and process for RF and low resistance applications
MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.
1. A MEMS device comprising:
a MEMS wafer including a handle wafer with one or more cavities, an insulating layer deposited on a surface of the handle wafer, a silicon device layer that comprises silicon, and a metal conductive layer deposited directly on a first surface of the silicon device layer, wherein a second surface of the silicon device layer is bonded to the insulating layer; and
a CMOS wafer bonded to the MEMS wafer, wherein the CMOS wafer includes at least one metal electrode such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.
2. The MEMS device of claim 1 , further comprising:
one or more stand-offs formed from the silicon device layer, wherein the metal conductive layer extends to cover the one or more of stand-offs; and
a bonding layer deposited on the metal conductive layer covering the one more stand-offs.
3. The MEMS device of claim 2 , wherein the bonding layer comprises germanium.
4. The MEMs device of claim 1 , where the electrical connection between the at least one metal electrode and at least the portion of the metal conductive layer includes a connection between the silicon device layer and the at least one metal electrode.
5. The MEMS device of claim 1 , where a portion of the silicon device layer is moveable in a vertical direction.
6. A MEMS device, comprising:
a MEMS substrate comprising a moveable portion and one or more stand-offs protruding from the MEMS substrate, an aluminum layer deposited onto the one or more stand-offs, an electrically conductive diffusion barrier layer disposed on top of the aluminum layer, and a germanium layer disposed on top of the electrically conductive diffusion barrier layer; and
a CMOS substrate coupled to the MEMS substrate, wherein the CMOS substrate contains at least one electrode and one or more aluminum pads, and wherein the one or more stand-offs are bonded to the one or more aluminum pads by utilizing an aluminum-germanium solder between the one or more aluminum pads and the germanium layer.
7. The MEMS device of claim 6 , where the electrical conductive diffusion barrier layer comprises titanium nitride.