IP Library Granted Patent US 9,627,648
Granted Patent B2
US 9,627,648 · App. 14/802,642 · Granted Apr 18, 2017

Light-emitting device and electronic device

Inventors: Shunpei Yamazaki (Tokyo, JP); Shingo Eguchi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5256H01L27/322H01L27/3244H01L27/3258H01L27/3276H01L51/5237H01L51/5246H01L51/0097H01L2251/5338H01L2251/558
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Quick Facts
Patent No.
US 9,627,648
App. No.
14/802,642
Granted
Apr 18, 2017
Kind
B2
Abstract

A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.

Claims (60)

1. A light-emitting device comprising:

a first flexible substrate comprising a first surface and a second surface opposite to and below the first surface;

a transistor over the first surface;

a planarization layer over the transistor;

a light-emitting element over the planarization layer, the light-emitting element being electrically connected to the transistor;

an adhesive layer over the light-emitting element; and

a second flexible substrate over the adhesive layer, the second flexible substrate comprising a third surface and a fourth surface opposite to and over the third surface,

wherein the adhesive layer is in contact with the third surface, and

wherein a first distance from the second surface to a top surface of the planarization layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the top surface of the planarization layer.

2. The light-emitting device according to claim 1 ,

wherein the first distance is 0.9 to 1.1 times as large as the second distance.

3. The light-emitting device according to claim 1 ,

wherein the planarization layer is in contact with the transistor.

4. The light-emitting device according to claim 1 ,

wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a pair of electrodes, and

wherein the light-emitting element is in contact with the planarization layer.

5. An electronic device comprising the light-emitting device according to claim 4 in a display portion.

6. An electronic device comprising the light-emitting device according to claim 1 in a display portion.

7. The light-emitting device according to claim 1 ,

wherein the adhesive layer is in contact with the planarization layer.

8. The light-emitting device according to claim 1 ,

wherein a portion of one of the transistor, the planarization layer, and the light-emitting element is positioned in a neutral plane.

9. A light-emitting device comprising:

a first flexible substrate comprising a first surface and a second surface opposite to and below the first surface;

a transistor over the first surface;

a planarization layer over the transistor;

a light-emitting element over the planarization layer, the light-emitting element being electrically connected to the transistor;

a first protection layer covering the light-emitting element;

a second protection layer over the first protection layer;

an adhesive layer over the light-emitting element; and

a second flexible substrate over the adhesive layer, the second flexible substrate comprising a third surface and a fourth surface opposite to and over the third surface,

wherein a thickness of the first protection layer is greater than or equal to 0.1 μm and less than 100 μm,

wherein a surface of the second protection layer has a higher hardness than a surface of the first protection layer,

wherein the adhesive layer is in contact with the third surface, and

wherein a first distance from the second surface to a top surface of the planarization layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the top surface of the planarization layer.

10. The light-emitting device according to claim 9 ,

wherein the first distance is 0.9 to 1.1 times as large as the second distance.

11. An electronic device comprising the light-emitting device according to claim 9 in a display portion.

12. The light-emitting device according to claim 9 ,

wherein the adhesive layer is in contact with the planarization layer.

13. The light-emitting device according to claim 9 ,

wherein a portion of one of the transistor, the planarization layer, and the light-emitting element is positioned in a neutral plane.

14. A light-emitting device comprising:

a first flexible substrate comprising a first surface and a second surface opposite to and below the first surface;

a transistor over the first surface;

a planarization layer over the transistor;

a light-emitting element over the planarization layer, the light-emitting element being electrically connected to the transistor;

an adhesive layer over the light-emitting element;

a second flexible substrate over the adhesive layer, the second flexible substrate comprising a third surface and a fourth surface opposite to and over the third surface; and

an FPC affixed to the first substrate,

wherein the adhesive layer is in contact with the third surface, and

wherein a first distance from the second surface to a top surface of the planarization layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the top surface of the planarization layer.

15. The light-emitting device according to claim 14 ,

wherein the first distance is 0.9 to 1.1 times as large as the second distance.

16. The light-emitting device according to claim 14 ,

wherein the planarization layer is in contact with the transistor.

17. The light-emitting device according to claim 14 ,

wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a pair of electrodes, and

wherein the light-emitting element is in contact with the planarization layer.

18. An electronic device comprising the light-emitting device according to claim 14 in a display portion.

Priority Claims (4)
JP 2012-107283 · May 9, 2012 · national
JP 2012-107284 · May 9, 2012 · national
JP 2012-108190 · May 10, 2012 · national
JP 2013-044857 · Mar 7, 2013 · national
Continuity (2)
Division 13886474 · May 3, 2013
Related Publication 20150325812A1 · Nov 12, 2015