Incremental error detection and correction for memories
View Patent ↗A device and method for incrementally updating the error detecting and correcting bits for an error corrected block of data in a cross point memory array is disclosed. When an error corrected block of data is modified, only the modified data bits and the incrementally updated error detecting and correcting bits are changed in the cross point memory device for improved performant and reduced impact to device endurance.
1. A method of storing information with increased speed in an electronic cross point memory storage device having a plurality of memory cells arranged in columns and rows, comprising:
(i) targeting data bits of a subset of the plurality of memory cells in one of the rows;
(ii) determining error correcting values corresponding to new data bits to be written to the subset of the plurality of memory cells in the one of the rows;
(iii) writing the new data bits to the subset of the plurality of memory cells in the one of the rows of the memory storage device; and
(iv) writing error correcting bits corresponding to the error correcting values to the memory device;
wherein the plurality of memory cells in the one or the rows other than the subset are unchanged.
2. The method of claim 1 , wherein error correcting bits written to the memory storage device comprises only those error detecting values that have changed as a result of the writing the new data bits to the subset of the plurality of memory cells.
3. The method of claim 1 , wherein the determining the error correcting values corresponding to the writing the new data bits comprises:
(i) removing an impact to the error detecting values of the data bits; and
(ii) incorporating an impact to the error detecting values of the new data bits.
4. The method of claim 1 , wherein the determining the error correcting values corresponding to the writing the new data bits comprises:
(i) determining an impact to the error detecting values of the new data bits; and
(ii) updating the error detecting values with the determination of the impact of the new data bits.
5. The method of claim 1 , wherein the error correcting values corresponding to the new data bits are determined for each row and each column of the memory cells in which the new data bits reside.
6. A memory storage device with increased speed comprising a cross point memory array having a plurality of memory cells arranged in columns and rows, the memory storage device operable to perform a method comprising:
(i) targeting data bits of a subset of the plurality of memory cells in one of the columns;
(ii) determining error correcting values corresponding to new data bits to be written to the subset of the plurality of memory cells in the one of the columns;
(iii) writing the new data bits to the subset of the plurality of memory cells in the one of the columns of the memory storage device; and
(iv) writing error correcting bits corresponding to the error correcting values to the memory storage device;
wherein the plurality of memory cells in the one of the columns other than the subset are unchanged.
7. The memory storage device of claim 6 , wherein in error correcting bits written to the memory storage device comprises only those error detecting values that have changed as a result of the writing the new data bits to the subset of the plurality of memory cells.
8. The memory storage device of claim 6 , wherein the determining the error correcting values corresponding to the writing the new data bits comprises:
(i) removing an impact to the error detecting values of the data bits; and
(ii) incorporating an impact to the error detecting values of the new data bits.
9. The memory storage device of claim 6 , wherein the determining the error correcting values corresponding to the writing the new data bits comprises:
(i) determining an impact to the error detecting values of the new data bits; and
(ii) updating the error detecting values with the determination of the impact of the new data bits.