Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus

1. A method of manufacturing a semiconductor device, comprising:

forming a film containing a specific element, oxygen, carbon and nitrogen or a film containing the specific element, oxygen and carbon on a substrate, by performing a cycle of alternately performing n times (n is an integer of one or more) (a) forming a first layer containing the specific element, carbon and nitrogen and (b) forming a second layer, while interposing purging a residual gas in-between,

wherein (a) comprises alternately performing m times (m is an integer of two or more) (a-1) supplying a first source gas to the substrate and (a-2) supplying a second source gas to the substrate, while interposing purging a residual gas in-between,

wherein the first source gas contains the specific element and a halogen-group; and

wherein the second source gas contains the specific element and an amino-group; and

wherein (b) comprises oxidizing the first layer by supplying an oxygen-containing gas, or the oxygen-containing gas and a hydrogen-containing gas to the substrate.

2. The method of claim 1 , wherein the first layer includes a layer which contains the specific element, nitrogen and carbon, and in which a carbon concentration is higher than a nitrogen concentration.

3. The method of claim 1 , wherein in (b), the oxygen-containing gas which is thermally activated, or the oxygen-containing gas and the hydrogen-containing gas which are thermally activated, are supplied to the substrate.

4. The method of claim 1 , wherein in (b), the oxygen-containing gas which is thermally activated by non-plasma, or the oxygen-containing gas and the hydrogen-containing gas which are thermally activated by non-plasma, are supplied to the substrate.

5. The method of claim 1 , wherein in (b), an oxidation reaction of the first layer is not saturated.

6. The method of claim 1 , wherein the specific element includes a semiconductor element or a metal element.

7. The method of claim 1 , wherein the first source gas includes a chlorosilane-based source or a fluorosilane-based source gas, and the second source gas includes an aminosilane-based source gas.

8. The method of claim 1 , wherein the specific element includes at least one selected from the group consisting of Si, Ti, Zr, Hf, Ta, Al and Mo.

9. The method of claim 1 , wherein n is set to be an integer of two or more.

10. The method of claim 1 , wherein a composition ratio of the film is controlled by controlling a gas supply time or an oxidizing power in (b).

11. A method of manufacturing a semiconductor device, comprising:

forming a film containing a specific element, oxygen, carbon and nitrogen or a film containing the specific element, oxygen and carbon on a substrate, by performing a cycle n times (n is an integer of one or more), the cycle including asynchronously performing:

(a) forming a first layer containing the specific element, carbon and nitrogen by performing a set m times (m is an integer of two or more), the set including asynchronously performing:

(a-1) supplying a first source gas containing the specific element and a halogen-group to the substrate;

(a-2) purging a residual gas including the first source gas on the substrate;

(a-3) supplying a second source gas containing the specific element and an amino-group to the substrate; and

(a-4) purging a residual gas including the second source gas on the substrate, and

(b) forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, or the oxygen-containing gas and a hydrogen-containing gas to the substrate.

12. The method of claim 11 , wherein n is set to be an integer of two or more.

13. The method of claim 11 , wherein a composition ratio of the film is controlled by controlling a gas supply time or an oxidizing power in (b).

14. A method of manufacturing a semiconductor device, comprising:

forming a film containing silicon, oxygen, carbon and nitrogen or a film containing silicon, oxygen and carbon on a substrate, by performing a cycle n times (n is an integer of one or more), the cycle including asynchronously performing:

(a) forming a first layer containing silicon, carbon and nitrogen by performing a set m times (m is an integer of two or more), the set including asynchronously performing:

(a-1) supplying a first source gas containing silicon and a halogen-group to the substrate;

(a-2) purging a residual gas including the first source gas on the substrate;

(a-3) supplying a second source gas containing silicon and an amino-group to the substrate; and

(a-4) purging a residual gas including the second source gas on the substrate, and

(b) forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, or the oxygen-containing gas and a hydrogen-containing gas to the substrate.

15. The method of claim 14 , wherein n is set to be an integer of two or more.

16. The method of claim 14 , wherein a composition ratio of the film is controlled by controlling a gas supply time or an oxidizing power in (b).