Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
Manufacturing quality of a semiconductor device can be improved, and manufacturing throughput can be improved. A method of manufacturing a semiconductor device includes (a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof, (b) reducing the oxygen-containing film by supplying a reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity, and (c) melting the solder by supplying a thermally conductive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity.
1. A method of manufacturing a semiconductor device comprising:
(a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof;
(b) reducing the oxygen-containing film by supplying a reducing gas and an additive gas having a thermal conductivity different from that of the reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity; and
(c) melting the solder by supplying the reducing gas as a thermally conductive gas and the additive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity,
wherein a ratio of the reducing gas to the additive gas in (c) is greater than a ratio of the reducing gas to the additive gas in (b).
2. The method of claim 1 , wherein a flow rate of the thermally conductive gas is controlled in (c) so as to maintain a temperature of the substrate at a predetermined temperature.
3. The method of claim 1 , wherein a distance between a front end of a lifter pin of the substrate supporting unit and a top surface of the substrate supporting unit is adjusted to a first distance in (b), and the distance between the front end of the lifter pin and the top surface of the substrate supporting unit is adjusted to a second distance in (c).
4. The method of claim 3 , wherein a temperature of the substrate is maintained at 250° C. or lower in (c), and the second distance ranges from 0.5 mm to 5 mm in (c).
5. The method of claim 3 , wherein the first distance is longer than the second distance.
6. The method of claim 1 , wherein (b) comprises subjecting the substrate to plasma processing while maintaining the substrate at a temperature lower than a melting point of the solder, and (c) comprises processing the substrate at a temperature higher than the melting point of the solder and lower than a temperature at which the substrate is damaged.
7. The method of claim 1 , wherein the substrate supporting unit comprises a lifter pin and a heater, and each of (b) and (c) is performed with the substrate heated by the heater maintained at a predetermined temperature and placed on a front end of the lifter pin.
8. The method of claim 7 , wherein the substrate is heated by thermal conduction of a gas near the heater and the substrate in (b) and (c).
9. The method of claim 1 , wherein an inner pressure of the processing chamber when performing (c) is higher than that of the processing chamber when performing (b).
10. A non-transitory computer-readable recording medium storing a program for causing a computer to perform:
(a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof;
(b) reducing the oxygen-containing film by supplying a reducing gas and an additive gas having a thermal conductivity different from that of the reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity; and
(c) melting the solder by supplying the reducing gas as a thermally conductive gas and the additive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity,
wherein a ratio of the reducing gas to the additive gas in (c) is greater than a ratio of the reducing gas to the additive gas in (b).
11. The non-transitory computer-readable recording medium of claim 10 , wherein (b) comprises subjecting the substrate to plasma processing while maintaining the substrate at a temperature lower than a melting point of the solder, and (c) comprises processing the substrate at a temperature higher than the melting point of the solder and lower than a temperature at which the substrate is damaged.