Microwave-annealed indium gallium zinc oxide films and methods of making the same
A microwave-annealed indium gallium zinc oxide (IGZO) film and methods of making the same are disclosed. The methods may comprise: depositing an IGZO film onto a substrate; and microwave annealing the IGZO film to produce a microwave-annealed IGZO film.
1. A method comprising:
(a) depositing an indium gallium zinc oxide (IGZO) film onto a substrate; and
(b) microwave annealing the IGZO film to produce a microwave-annealed IGZO film,
wherein the microwave-annealed IGZO film has one or more of the following properties:
an average optical transmittance that is at least 101% of an average optical transmittance of the IGZO film or a conventionally-annealed IGZO film, the average optical transmittance being measured from 300 nm to 800 nm,
a maximum optical transmittance that is at least 101% of a maximum optical transmittance of the IGZO film or the conventionally-annealed IGZO film, the maximum optical transmittance being measured from 300 nm to 800 nm, and
a figure of merit that is at least 101% of a figure of merit of the IGZO film or the conventionally-annealed IGZO film, the figure of merit is the average optical transmittance to the tenth power divided by a sheet resistance.
2. The method of claim 1 , wherein the microwave annealing is performed for a length of time of less than 1 hour.
3. The method of claim 1 , wherein the microwave annealing is performed at a temperature of less than 500° C.
4. The method of claim 1 , wherein the microwave annealing is performed in an atmosphere that does not annihilate vacancies in the IGZO film.
5. The method of claim 1 , wherein the microwave annealing is performed in an absence of oxygen.
6. The method of claim 1 , wherein the microwave annealing is performed in a forming gas or a vacuum.
7. The method of claim 1 , wherein the IGZO film has a thickness of 1 nm to 1 μm.
8. The method of claim 1 , wherein the average optical transmittance of the microwave-annealed IGZO film is at least 101% of the average optical transmittance of the IGZO film or a conventionally-annealed IGZO film, or
wherein the maximum optical transmittance of the microwave-annealed IGZO film is at least 101% of the maximum optical transmittance of the IGZO film or the conventionally-annealed IGZO film.
9. The method of claim 1 , wherein the figure of merit of the microwave-annealed IGZO film is at least 101% of the figure of merit of the IGZO film or the conventionally-annealed IGZO film.
10. A microwave-annealed indium gallium zinc oxide (IGZO) film, wherein the microwave-annealed IGZO film is formed by depositing an IGZO film onto a substrate and microwave annealing the IGZO film to produce the microwave-annealed IGZO film,
wherein the microwave-annealed IGZO film has one or more of the following properties:
an average optical transmittance that is at least 101% of an average optical transmittance of a conventionally-annealed IGZO film, the average optical transmittance being measured from 300 nm to 800 nm,
a maximum optical transmittance that is at least 101% of a maximum optical transmittance of the conventionally-annealed IGZO film, the maximum optical transmittance being measured from 300 nm to 800 nm, and
a figure of merit that is at least 101% of a figure of merit of the conventionally-annealed IGZO film, the figure of merit is the average optical transmittance to the tenth power divided by a sheet resistance.
11. The microwave-annealed IGZO of claim 10 , wherein the microwave annealing is performed for a length of time of less than 1 hour.
12. The microwave-annealed IGZO of claim 10 , wherein the microwave annealing is performed at a temperature of less than 500° C.
13. The microwave-annealed IGZO of claim 10 , wherein the microwave-annealed IGZO film has a resistivity of less than 5.0×10 −5 ohm-cm.
14. The microwave-annealed IGZO film of claim 10 , wherein the microwave-annealed IGZO film has a sheet resistivity of less than 750 ohms per square.
15. The microwave-annealed IGZO film of claim 10 , wherein the microwave-annealed IGZO film has a thickness of 1 nm to 1 μm.
16. The microwave-annealed IGZO film of claim 10 , wherein the average optical transmittance of the microwave-annealed IGZO film is at least 101% of the average optical transmittance of the conventionally-annealed IGZO film.
17. The microwave-annealed IGZO film of claim 10 , wherein the maximum optical transmittance of the microwave-annealed IGZO film is at least 101% of the maximum optical transmittance of the conventionally-annealed IGZO film, the maximum optical transmittance being measured from 300 nm to 800 nm.
18. The microwave-annealed IGZO film of claim 10 , wherein the figure of merit of the microwave-annealed IGZO film is at least 101% of the figure of merit of the conventionally-annealed IGZO film.
19. A system comprising microwave-annealed indium gallium zinc oxide (IGZO) film disposed atop a substrate, the microwave-annealed IGZO film having one or more of the following properties:
an average optical transmittance that is at least 101% of an average optical transmittance of a conventionally-annealed IGZO film, the average optical transmittance being measured from 300 nm to 800 nm;
a maximum optical transmittance that is at least 101% of a maximum optical transmittance of the conventionally-annealed IGZO film, the maximum optical transmittance being measured from 300 nm to 800 nm; and
a figure of merit that is at least 101% of a figure of merit of the conventionally-annealed IGZO film, wherein the figure of merit is the average optical transmittance to the tenth power divided by a sheet resistance.
20. The system of claim 19 , wherein the microwave-annealed IGZO film has a thickness of 1 nm to 1 μm.