Microelectronic packages having stacked accelerometer and magnetometer die and methods for the production thereof
Methods for fabricating multi-sensor microelectronic packages and multi-sensor microelectronic packages are provided. In one embodiment, the method includes positioning a magnetometer wafer comprised of an array of non-singulated magnetometer die over an accelerometer wafer comprised of an array of non-singulated accelerometer die. The magnetometer wafer is bonded to the accelerometer wafer to produce a bonded wafer stack. The bonded wafer stack is then singulated to yield a plurality of multi-sensor microelectronic packages each including a singulated magnetometer die bonded to a singulated accelerometer die.
1. A multi-sensor microelectronic package, comprising:
a singulated accelerometer die comprising:
a first Microelectromechanical Systems (MEMS) transducer structure;
a bond pad shelf; and
a first row of bond pads on the bond pad shelf;
a singulated magnetometer die positioned over the first MEMS transducer structure;
a ring of bonding material bonding the singulated magnetometer die to the singulated accelerometer die; and
a first hermetically-sealed cavity formed between the singulated magnetometer and the singulated accelerometer die, circumferentially bounded by the ring of bonding material, and enclosing the first MEMS transducer structure.
2. The multi-sensor microelectronic package of claim 1 wherein the singulated magnetometer die comprises:
a frontside;
a backside opposite the frontside; and
a second MEMS transducer structure formed on the frontside and aligning with the first MEMS transducer structure, as taken along an axis orthogonal to the frontside.
3. The multi-sensor microelectronic package of claim 1 wherein the singulated magnetometer die comprises:
a backside;
a second row of bond pads on the backside of the singulated magnetometer die and wirebonded to the first row of bond pads; and
a sawn vertical sidewall located between the second row of bond pads and the first row of bond pads, as taken along an axis parallel to the backside.
4. The multi-sensor microelectronic package of claim 3 further comprising an Application Specific Integrated Circuit (ASIC) die adjacent the singulated accelerometer die and having a third row of bond pads wirebonded to the second row of bond pads.
5. The multi-sensor microelectronic package of claim 1 further comprising a gyroscope die interconnected with the singulated magnetometer die and with the singulated accelerometer die.
6. The multi-sensor microelectronic package of claim 1 wherein the singulated magnetometer die comprises:
a frontside;
a backside opposite the frontside; and
a second MEMS structure formed on the frontside and aligning with the first MEMS structure, as taken along an axis orthogonal to the frontside.
7. The multi-sensor microelectronic package of claim 1 wherein the ring of bonding material is composed of an electrically-conductive material.
8. A multi-sensor microelectronic package comprising:
a singulated accelerometer die comprising a frontside on which a first Microelectromechanical Systems (MEMS) transducer structure is formed;
a singulated magnetometer die positioned over the first MEMS transducer structure, the singulated magnetometer die comprising:
a frontside;
a backside opposite the frontside; and
a second MEMS structure formed on the frontside of the singulated magnetometer die and aligning with the first MEMS structure, as taken along an axis orthogonal to the frontside;
a ring of bonding material bonding the backside of the singulated magnetometer die directly to the frontside of the singulated accelerometer die; and
a first hermetically-sealed cavity formed between the singulated magnetometer and the singulated accelerometer die, circumferentially bounded by the ring of bonding material, and enclosing the first MEMS transducer structure.
9. The multi-sensor microelectronic package of claim 8 wherein the ring of bonding material is composed of an electrically-conductive material.
10. The multi-sensor microelectronic package of claim 8 further comprising:
a bond pad on the frontside of the singulated magnetometer die; and
a through silicon via formed through the singulated accelerometer die and electrically coupled to the bond pad through the ring of bonding material.
11. The multi-sensor microelectronic package of claim 8 wherein the singulated accelerometer die comprises:
a bond pad shelf; and
a first row of bond pads on the bond pad shelf.
12. The multi-sensor microelectronic package of claim 11 wherein the singulated magnetometer die comprises:
a backside;
a second row of bond pads on the backside of the singulated magnetometer die and wirebonded to the first row of bond pads; and
a sawn vertical sidewall located between the second row of bond pads and the first row of bond pads, as taken along an axis parallel to the backside.
13. The multi-sensor microelectronic package of claim 12 further comprising an Application Specific Integrated Circuit (ASIC) die adjacent the singulated accelerometer die and having a third row of bond pads wirebonded to the second row of bond pads.
14. The multi-sensor microelectronic package of claim 8 further comprising a gyroscope die interconnected with the singulated magnetometer die and with the singulated accelerometer die.
15. The multi-sensor microelectronic package of claim 14 further comprising:
an Application Specific Integrated Circuit (ASIC) die adjacent the singulated accelerometer die; and
a second hermetically-sealed cavity formed between the gyroscopic die and the ASCI die;
wherein the gyroscope die comprises a third MEMS transducer structure enclosed by the second hermetically-sealed cavity.
16. A multi-sensor microelectronic package, comprising:
a singulated accelerometer die having a frontside, a backside opposite the frontside, and a first Microelectromechanical Systems (MEMS) transducer structure formed on the frontside;
a singulated magnetometer die having a frontside, a backside opposite the frontside, and a second MEMS transducer structure formed on the frontside; and
bonding material bonding the backside of the singulated magnetometer die directly to the frontside of the singulated accelerometer die.
17. The multi-sensor microelectronic package of claim 16 further comprising a first hermetically-sealed cavity formed between the singulated magnetometer die and the singulated accelerometer die, the first hermetically-sealed cavity enclosing the first MEMS transducer structure and containing a first internal pressure.
18. The multi-sensor microelectronic package of claim 17 further comprising a gyroscope die disposed in a stacked relationship with the singulated accelerometer die and the singulated magnetometer die, the gyroscope die having a third MEMS transducer formed thereon.
19. The multi-sensor microelectronic package of claim 18 further comprising:
an Application Specific Integrated Circuit (ASIC) die disposed between the gyroscope die and the accelerometer die; and
a second hermetically-sealed cavity formed between the ASIC die and the gyroscope die, the second hermetically-sealed cavity enclosing the third MEMS transducer structure and containing a second internal pressure less than the first internal pressure.
20. The multi-sensor microelectronic package of claim 19 wherein the ASIC die comprises at least one bond shelf region extending laterally beyond the accelerometer die.