Devices containing metal chalcogenides
Some embodiments include a device having a conductive material, a metal chalcogenide-containing material, and a region between the metal chalcogenide-containing material and the conductive material. The region contains a composition having a bandgap of at least about 3.5 electronvolts and a dielectric constant within a range of from about 1.8 to 25. Some embodiments include a device having a first electrode, a second electrode, and a metal chalcogenide-containing material between the first and second electrodes. The device also includes an electric-field-modifying region between the metal chalcogenide-containing material and one of the first and second electrodes. The electric-field-modifying region contains a composition having a bandgap of at least about 3.5 electronvolts having a low dielectric constant and a low conduction band offset relative to a workfunction of metal of the metal chalcogenide-containing material.
1. A device, comprising:
a first electrode, a second electrode, and a metal chalcogenide-containing material between the first and second electrodes;
an electric-field-modifying region between the metal chalcogenide-containing material and one of the first and second electrodes, the region comprising at least one composition having a bandgap of at least about 3.5 electronvolts; and
wherein the region is a first region and is between the first electrode and the metal chalcogenide-containing material, and further comprising a second region between the metal chalcogenide-containing material and the second electrode with the second region also comprising a composition having a bandgap of at least about 3.5 electronvolts.
2. The device of claim 1 wherein the first and second regions comprise a same composition as one another.
3. The device of claim 1 wherein the first and second regions comprise different compositions relative to one another.
4. A device, comprising:
a first electrode, a second electrode, and a metal chalcogenide-containing material between the first and second electrodes;
an electric-field-modifying region between the metal chalcogenide-containing material and one of the first and second electrodes; the electric-field-modifying region comprising a stack of at least three layers; and
wherein the layers comprise a first layer, a second layer and a third layer; with the first and third layers comprising one or both of gallium oxide and gadolinium oxide, and with the second layer comprising aluminum oxide.
5. The device of claim 4 wherein the first and third layers are a same composition as one another.
6. The device of claim 4 wherein the first and third layers are different compositions relative to one another.
7. A device, comprising:
a first electrode, a second electrode, and a metal chalcogenide-containing material between the first and second electrodes;
an electric-field-modifying region between the metal chalcogenide-containing material and one of the first and second electrodes; the electric-field-modifying region comprising a stack of at least two layers; and
wherein the electric-field-modifying region is first electric-field-modifying region and is between the first electrode and the metal chalcogenide-containing material, and further comprising a second electric-field-modifying region between the second electrode and the chalcogenide.
8. The device of claim 7 wherein the second electric-field-modifying region is identical in composition to the first electric-field-modifying region.
9. The device of claim 7 wherein the second electric-field-modifying region is different in composition from the first electric-field-modifying region.