Noise shielding techniques for ultra low current measurements in biochemical applications
A device having an integrated noise shield is disclosed. The device includes a plurality of vertical shielding structures substantially surrounding a semiconductor device. The device further includes an opening above the semiconductor device substantially filled with a conductive fluid, wherein the plurality of vertical shielding structures and the conductive fluid shield the semiconductor device from ambient radiation. In some embodiments, the device further includes a conductive bottom shield below the semiconductor device shielding the semiconductor device from ambient radiation. In some embodiments, the opening is configured to allow a biological sample to be introduced into the semiconductor device. In some embodiments, the vertical shielding structures comprise a plurality of vias, wherein each of the plurality of vias connects more than one conductive layers together. In some embodiments, the device comprises a nanopore device, and wherein the nanopore device comprises a single cell of a nanopore array.
1. A nanopore device having an integrated well, comprising:
a plurality of vertical structures substantially surrounding the nanopore device, wherein the plurality of vertical structures comprises a plurality of vertical vias arranged in one or more concentric rings surrounding the nanopore device, with the nanopore device substantially at the center; and
an opening above the nanopore device substantially filled with a conductive fluid.
2. The nanopore device of claim 1 , further comprising more than one conductive layers, and wherein each of the plurality of vertical vias connects more than one of the more than one conductive layers together.
3. The nanopore device of claim 2 , further comprising an oxide layer between at least some of the more than one conductive layers, and wherein the oxide layer is configured to form a capacitor.
4. The nanopore device of claim 1 , further comprising an oxide layer insulating a conductive layer from the conductive fluid.
5. The nanopore device of claim 4 , wherein the oxide layer is configured to form a capacitor.
6. The nanopore device of claim 1 , wherein the plurality of vertical vias are arranged in a single ring surrounding the nanopore device, with the nanopore device substantially at the center of the single ring.
7. The nanopore device of claim 1 , wherein the vertical vias in a first ring of vias are offset from the vertical vias in a second ring of vias.
8. The nanopore device of claim 1 , further comprising a conductive layer above the plurality of vertical structures, and wherein the conductive layer is extended horizontally as an overhang above the plurality of vertical structures.
9. A method for forming an integrated well for a nanopore device, comprising:
providing a plurality of vertical structures substantially surrounding the nanopore device, wherein the plurality of vertical structures comprises a plurality of vertical vias arranged in one or more concentric rings surrounding the nanopore device, with the nanopore device substantially at the center; and
providing an opening above the nanopore device substantially filled with a conductive fluid.
10. The method of claim 9 , further comprising:
providing more than one conductive layers, and wherein each of the plurality of vertical vias connects more than one of the more than one conductive layers together.
11. The method of claim 10 , further comprising:
providing an oxide layer between at least some of the more than one conductive layers, and wherein the oxide layer is configured to form a capacitor.
12. The method of claim 9 , further comprising:
providing an oxide layer insulating a conductive layer from the conductive fluid.
13. The method of claim 12 , wherein the oxide layer is configured to form a capacitor.
14. The method of claim 9 , wherein the plurality of vertical vias are arranged in a single ring surrounding the nanopore device, with the nanopore device substantially at the center of the single ring.
15. The method of claim 9 , wherein the vertical vias in a first ring of vias are offset from the vertical vias in a second ring of vias.
16. The method of claim 9 , further comprising:
providing a conductive layer above the plurality of vertical structures, and wherein the conductive layer is extended horizontally as an overhang above the plurality of vertical structures.