Porous fin as compliant medium to form dislocation-free heteroepitaxial films
View Patent ↗A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer to form fins. The fins are converted to porous fins. A surface of the porous fins is treated to make the surface suitable for epitaxial growth. Lattice mismatch is compensated for between an epitaxially grown monocrystalline layer grown on the surface and the monocrystalline substrate by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate.
1. A method for forming a heteroepitaxial layer, comprising:
forming an epitaxial grown layer on a monocrystalline substrate;
patterning the epitaxial grown silicon layer to form fins;
converting the fins to porous fins;
treating a surface of the porous fins to make the surface suitable for epitaxial growth; and
compensating for lattice mismatch of an epitaxially grown monocrystalline layer grown on the surface by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate.
2. The method as recited in claim 1 , wherein forming the epitaxial grown layer includes forming an epitaxial grown p+ doped layer.
3. The method as recited in claim 1 , wherein patterning the epitaxial grown layer to form fins includes sizing the fins to provide compliance to permit an amount of relaxation of the epitaxially grown monocrystalline layer.
4. The method as recited in claim 1 , wherein converting the fins to the porous fins including anodizing the fins using the fins as an anode.
5. The method as recited in claim 1 , wherein treating the surface of the porous fins includes performing a hydrogenation process to form a continuous surface.
6. The method as recited in claim 1 , wherein compensating for lattice mismatch includes stretching or shrinking the porous fins to relax the epitaxially grown monocrystalline layer.
7. The method as recited in claim 1 , further comprising laterally growing the epitaxially grown monocrystalline layer to form a continuous layer.
8. The method as recited in claim 7 , further comprising vertically growing the epitaxially grown monocrystalline layer to form a thicker layer.
9. A method for forming a heteroepitaxial layer, comprising:
forming an epitaxial grown p+ doped silicon layer on a monocrystalline silicon substrate;
forming fins by patterning the epitaxial grown silicon layer wherein the fins are sized to provide compliance to permit an amount of relaxation;
anodizing the fins to form porous silicon fins;
performing a hydrogenation process on a surface of the porous silicon fins to make the surface suitable for epitaxial growth;
growing an epitaxial monocrystalline layer on the surface; and
relaxing the epitaxial monocrystalline layer by employing elasticity of the porous silicon fins.
10. The method as recited in claim 9 , wherein relaxing includes compensating for lattice mismatch between the monocrystalline silicon substrate and the epitaxial monocrystalline layer.
11. The method as recited in claim 9 , wherein relaxing includes stretching or shrinking the porous silicon fins.
12. The method as recited in claim 9 , further comprising laterally growing the epitaxial monocrystalline layer to form a continuous layer.
13. The method as recited in claim 12 , further comprising vertically growing the epitaxial monocrystalline layer to form a thicker layer.