Organic light-emitting diode display and manufacturing method thereof
An organic light-emitting diode display includes an organic light-emitting display device including a first electrode, an intermediate layer including an organic emission layer, and a second electrode; a first inorganic encapsulation layer on the second electrode; a second inorganic encapsulation layer on the first inorganic encapsulation layer; and an organic encapsulation layer on the second inorganic encapsulation layer. A refractive index of the first inorganic encapsulation layer is higher than a refractive index of the second inorganic encapsulation layer. The first inorganic encapsulation layer has an extinction coefficient of 0.02 to 0.07 and a refractive index of 2.1 to 2.3 at a blue wavelength.
1. An organic light-emitting diode display, comprising:
an organic light-emitting display device including a first electrode, an intermediate layer including an organic emission layer, and a second electrode;
a first inorganic encapsulation layer on the second electrode;
a second inorganic encapsulation layer on the first inorganic encapsulation layer; and
an organic encapsulation layer on the second inorganic encapsulation layer,
wherein a refractive index of the first inorganic encapsulation layer is higher than a refractive index of the second inorganic encapsulation layer, and
wherein the first inorganic encapsulation layer has an extinction coefficient of about 0.02 to about 0.07 and a refractive index of about 2.1 to about 2.3 at a blue wavelength.
2. The organic light-emitting diode display as claimed in claim 1 , wherein the first inorganic encapsulation layer has a thickness of about 500 Å to about 1000 Å.
3. The organic light-emitting diode display as claimed in claim 1 , wherein a difference between the refractive indexes of the first and second inorganic encapsulation layers is about 0.6 to about 0.9.
4. The organic light-emitting diode display as claimed in claim 1 , wherein the first and second inorganic encapsulation layers includes a silicon-based material.
5. The organic light-emitting diode display as claimed in claim 4 , wherein the first inorganic encapsulation layer includes silicon nitride (SiNx).
6. The organic light-emitting diode display as claimed in claim 1 , wherein the first inorganic encapsulation layer is directly on the second electrode.
7. The organic light-emitting diode display as claimed in claim 1 , further comprising a third inorganic encapsulation layer between the second inorganic encapsulation layer and the organic encapsulation layer.
8. The organic light-emitting diode display as claimed in claim 7 , wherein the first inorganic encapsulation layer, the second inorganic encapsulation layer, and the third inorganic encapsulation layer include a silicon-based material.
9. The organic light-emitting diode display as claimed in claim 7 , wherein:
a difference between a refractive index of the third inorganic encapsulation layer and a refractive index of the organic encapsulation layer is less than about 0.3, and
a difference between the refractive index of the third inorganic encapsulation layer and the refractive index of the second inorganic encapsulation layer is less than about 0.3.
10. A method of manufacturing an organic light-emitting diode display, the method comprising:
forming a first inorganic encapsulation layer on an organic light-emitting display device having an extinction coefficient of about 0.02 to about 0.07 and a refractive index of about 2.1 to about 2.3 at a blue wavelength,
wherein the organic light-emitting display device comprises:
a first electrode;
an intermediate layer formed on the first electrode and including an organic emission layer; and
a second electrode formed on the intermediate layer;
forming a second inorganic encapsulation layer on the first inorganic encapsulation layer, wherein a refractive index of the second inorganic encapsulation layer is lower than a refractive index of the first inorganic encapsulation layer;
forming an organic encapsulation layer on the second inorganic encapsulation layer; and
forming a third inorganic encapsulation layer on the organic encapsulation layer.
11. The method as claimed in claim 10 , wherein forming the first inorganic encapsulation layer and forming the second inorganic encapsulation layer are performed in an in-situ process.
12. The method as claimed in claim 10 , wherein forming the first inorganic encapsulation layer and the second inorganic encapsulation layer includes chemical vapor deposition.
13. The method as claimed in claim 10 , wherein the first inorganic encapsulation layer has a thickness of about 500 Å to about 1000 Å.
14. The method as claimed in claim 10 , wherein the first inorganic encapsulation layer includes silicon nitride (SiNx).
15. The method as claimed in claim 10 , wherein the refractive index of the second inorganic encapsulation layer is lower by about 0.6 to about 0.9 than the refractive index of the first inorganic encapsulation layer.
16. The method as claimed in claim 10 , further comprising, before forming the organic encapsulation layer, forming a third inorganic encapsulation layer on the second inorganic encapsulation layer.
17. The method as claimed in claim 16 , wherein:
a difference between a refractive index of the third inorganic encapsulation layer and a refractive index of the organic encapsulation layer is less than about 0.3, and
a difference between the refractive index of the third inorganic encapsulation layer and the refractive index of the second inorganic encapsulation layer is less than about 0.3.
18. The method as claimed in claim 10 , wherein forming the first inorganic encapsulation layer includes directly forming the first inorganic encapsulation layer on the second electrode.