Light emitting diode package and manufacturing method thereof

1. A light-emitting diode package, comprising:

a light-emitting diode chip disposed in a housing;

a first phosphor configured to emit green light; and

a second phosphor configured to emit red light,

wherein:

a white light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor;

the second phosphor has a chemical formula of A 2 MF 6 :Mn 4+ , A is one of Li, Na, K, Rb, Ce, and NH 4 , and M is one of Si, Ti, Nb, and Ta;

Mn 4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M; and

the white light has national television system committee (NTSC) color saturation which is more than or equal to about 85%.

2. The light-emitting diode package of claim 1 , wherein:

the white light has an x color coordinate and a y color coordinate forming a point present in a region on a CIE chromaticity diagram; and

the x color coordinate is about 0.25 to about 0.32 and the y color coordinate is 0.22 to 0.32.

3. The light-emitting diode package of claim 1 , wherein a light emitting intensity of the white light is configured to change by about 5% or less.

4. The light-emitting diode package of claim 1 , wherein a size of a peak wavelength of the green light is about 20% to about 35% a peak wavelength of the red light.

5. The light-emitting diode package of claim 1 , wherein the first phosphor is at least one of a BAM-based phosphor and a quantum dot phosphor.

6. The light-emitting diode package of claim 1 , wherein a peak wavelength of the green light of the first phosphor comprises a range from about 520 nm to 570 nm, and

a peak wavelength of the red light of the second phosphor comprises a range from about 610 nm to about 650 nm.

7. The light-emitting diode package of claim 1 , wherein the light-emitting diode chip comprises at least one of a blue light-emitting diode chip and an ultraviolet light-emitting diode chip.

8. The light-emitting diode package of claim 1 , wherein the red light emitted from the second phosphor has a full width at half maximum (FWHM) less than or equal to about 15 nm.

9. The light emitting diode package of claim 1 , wherein M is one of Nb and Ta.

10. A light-emitting diode package, comprising:

a light emitting diode chip disposed in a housing;

a first phosphor configured to emit green light; and

a second phosphor and a third phosphor configured to emit red light,

wherein the second phosphor has a chemical formula of A 2 MF 6 :Mn 4+ , A is one of Li, Na, K, Ba, Rb, Cs, Mg, Ca, Se, and Zn and M is one of Ti, Si, Zr, Sn, and Ge, and

wherein the third phosphor has a mass range of about 0.1 wt % to about 10 wt % with respect to the second phosphor,

wherein white light is formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, the second phosphor, and the third phosphor, and

the white light has national television system committee (NTSC) color saturation which is more than or equal to about 85%.

11. The light-emitting diode package of claim 10 , wherein:

the third phosphor is a nitride-based phosphor and the red light of the second phosphor and the red light of the third phosphor have different peak wavelengths.

12. The light-emitting diode package of claim 11 , wherein a peak wavelength of the green light of the first phosphor comprises a range from about 500 nm to about 570 nm,

a peak wavelength of the red light of the second phosphor comprises a range from about 610 nm to about 650 nm, and

a peak wavelength of the red light of the third phosphor comprises a range from about 600 nm to about 670 nm.

13. The light-emitting diode package of claim 11 , wherein the third phosphor comprises at least one of MSiN 2 , MSiON 2 , and M 2 Si 5 N 8 and the M is one of Ca, Sr, Ba, Zn, Mg, and Eu.

14. The light-emitting diode package of claim 11 , wherein the second phosphor has a full width at half maximum (FWHM) smaller than that of the third phosphor.

15. The light-emitting diode package of claim 11 , wherein the first phosphor comprises at least one of a Ba-Al-Mg (BAM)-based phosphor, a quantum dot phosphor, a silicate-based phosphor, a beta-SiAION-based phosphor, a Garnet-based phosphor, and an LSN-based phosphor.

16. The light-emitting diode package of claim 11 , wherein the white light has an x color coordinate and a y color coordinate forming a point which is present within a region on a CIE chromaticity diagram, and

the x color coordinate is about 0.25 to about 0.35 and the y color coordinate is about 0.22 to about 0.32.

17. The light-emitting diode package of claim 11 , wherein:

a height of the housing is about 0.6 mm; and

the first phosphor, the second phosphor, and the third phosphor have a mesh size of about 40 μm to about 60 μm.

18. The light-emitting diode package of claim 11 , wherein:

a height of the housing is about 0.4 mm; and

the first phosphor, the second phosphor, and the third phosphor have a mesh size of about 15 μm to about 40 μm.

19. The light-emitting diode package of claim 10 , wherein the light emitting diode chip comprises at least one of a blue light emitting diode chip and an ultraviolet light emitting diode chip.

20. The light-emitting diode package of claim 10 , wherein Mn 4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.