Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specifications

1. A method of controlling a resistive memory device, the method comprising:

accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array;

generating a first pulse power according to the accessed first pulse power specification; and

performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power; wherein

a second of the plurality of memory cells has a different memory cell coefficient relative to the first of the plurality of memory cells, and

the performing the write operation includes performing the write operation on the first of the plurality of memory cells and the second of the plurality of memory cells by using pulse powers corresponding to different memory cell coefficients.

2. The method of claim 1 , further comprising:

monitoring a result of the write operation;

accessing a second pulse power specification satisfying the memory cell coefficient based on a result of the monitoring; and

generating a second pulse power according to the accessed second pulse power specification, the generated second pulse power having a different voltage level and a different pulse width relative to the generated first pulse power.

3. The method of claim 1 , wherein the memory cell coefficient has a value based on at least one of a material and a structure of the plurality of memory cells.

4. The method of claim 1 , further comprising:

setting at least one of a voltage level and a pulse width of the generated first pulse power according to the accessed first pulse power specification.

5. The method of claim 4 , wherein the memory cell coefficient satisfies the equation

( V−Vos ) 2 ×PW=C,

where V denotes a voltage level of the generated first pulse power, Vos denotes an offset voltage level, PW denotes a pulse width of the generated first pulse power, and C denotes the memory cell coefficient.

6. The method of claim 5 , wherein the performing the write operation comprises:

applying the generated first pulse power having the set voltage level and the set pulse width to each of the plurality of memory cells to perform the same write operation on each of the plurality of memory cells.

7. The method of claim 5 , wherein the set voltage level of the generated first pulse power is greater than the offset voltage level.

8. The method of claim 4 , wherein if the set voltage level of the generated first pulse power is a maximum possible voltage level, then the setting of the pulse width of the first pulse power includes

determining a pulse width satisfying the memory cell coefficient based on the maximum possible voltage level.

9. The method of claim 4 , wherein if the set pulse width of the generated first pulse power is a maximum possible pulse width, then the setting of the voltage level of the first pulse power includes

determining a voltage level satisfying the memory cell coefficient based on the maximum possible pulse width.

10. The method of claim 5 , wherein

when the voltage level of the generated first pulse power is smaller than the offset voltage level, a read operation is performed.

11. The method of claim 1 , further comprising:

storing, in the resistive memory device, a plurality of pulse power specifications satisfying the memory cell coefficient, which is calculated by performing a test operation.

12. The method of claim 1 , wherein the write operation is a set write operation in which a resistance state of at least the first of the plurality of memory cells is reduced.

13. A method of controlling a resistive memory device, the method comprising:

setting a voltage level and a pulse width of a pulse power such that the pulse power satisfies a memory cell coefficient, the memory cell coefficient being based on characteristics of a plurality of memory cells of a memory cell array;

generating the pulse power having the set voltage level and the set pulse width in response to a write command; and

performing a write operation on the plurality of memory cells by using the generated pulse power, the write operation corresponding to the write command.

14. The method of claim 13 , wherein the plurality of memory cells are multilevel cells, and the method further includes

receiving information indicating which of a plurality of write operations is to be performed on the multilevel cells; and

accessing the memory cell coefficient from among a plurality of memory cell coefficients associated with the multilevel cells, the memory cell coefficient being associated with the write operation corresponding to the received information.

15. The method of claim 14 , further comprising:

storing a plurality of pulse power specifications satisfying the memory cell coefficient in the resistive memory device; and

wherein the set voltage level and the set pulse width of the pulse power are set according to a pulse power specification selected from among the plurality of pulse power specifications.

16. A method of programming at least one memory cell of a resistive memory device, the method comprising:

selecting a first pulse power specification from among a plurality of pulse power specifications based on a memory cell coefficient for the at least one memory cell, each of the plurality of pulse power specifications corresponding to a write operation for the at least one memory cell;

setting a voltage level and a pulse width for performing the write operation on the at least one memory cell based the selected first pulse power specification; and

performing the write operation on the at least one memory cell using the set voltage level and pulse width.

17. The method of claim 16 , further comprising:

detecting a failure of the write operation;

selecting a second pulse power specification from among the plurality of pulse power specifications corresponding to the write operation;

re-setting the voltage level and the pulse width for performing the write operation on the at least one memory cell based the selected second pulse power specification; and

re-performing the write operation using the re-set voltage level and pulse width.

18. The method of claim 16 , wherein

the at least one memory cell is a multilevel cell having a plurality of resistance states, each of the plurality of resistance states having an associated memory cell coefficient; and

the selecting selects the first pulse power specification based on the memory cell coefficient associated with a resistance state, from among the plurality of resistance states, corresponding to the write operation.

19. The method of claim 16 , wherein each of the plurality of pulse width specifications satisfies the memory cell coefficient.

20. The method of claim 16 , wherein the selecting selects the first pulse power specification based on one of a maximum voltage level and a maximum pulse width capability of the resistive memory device.