Solid-state imaging device, with charge holding section between trenched transfer gate sections manufacturing method of same and electronic apparatus
A solid-state imaging device includes a pixel having a photoelectric conversion element which generates a charge in response to incident light, a first transfer gate which transfers the charge from the photoelectric conversion element to a charge holding section, and a second transfer gate which transfers the charge from the charge holding section to a floating diffusion. The first transfer gate includes a trench gate structure having at least two trench gate sections embedded in a depth direction of a semiconductor substrate, and the charge holding section includes a semiconductor region positioned between adjacent trench gate sections.
1. A solid-state imaging device, comprising:
a photoelectric conversion element configured to generate a charge in response to incident light; and
a transfer gate configured to transfer the charge from the photoelectric conversion element to a charge holding section,
wherein the transfer gate includes a trench gate structure having at least two trench gate sections disposed in a depth direction of a semiconductor substrate and a connecting portion connecting the at least two trench gate sections, and
wherein the charge holding section includes a semiconductor region disposed between adjacent ones of the trench gate sections and entirely underneath the connecting portion of the transfer gate.
2. The solid-state imaging device according to claim 1 , wherein the trench gate sections extend into a region of a first conductivity type, and the charge holding section is a region of a second conductivity type.
3. The solid-state imaging device according to claim 2 , wherein the first conductivity type is P-type and the second conductivity type is N-type.
4. An imaging device, comprising:
a photoelectric conversion element configured to generate a charge in response to incident light;
a first transfer gate configured to transfer the charge from the photoelectric conversion element to a charge holding section; and
a second transfer gate configured to transfer the charge from the charge holding section to a floating diffusion,
wherein the first transfer gate includes a trench gate structure having at least two trench gate sections disposed in a depth direction of a semiconductor substrate and a connecting portion connecting the at least two trench gate sections, and
wherein at least a portion of the charge holding section is surrounded by the trench gate structure and is entirely underneath the connecting portion of the first transfer gate.
5. The imaging device according to claim 4 , wherein the first transfer gate is disposed along a first straight virtual line between the photoelectric conversion element and the second transfer gate.
6. The imaging device according to claim 5 , wherein the charge holding section is disposed along a second straight virtual line between the photoelectric conversion element and the floating diffusion.
7. The imaging device according to claim 5 , wherein the second transfer gate is disposed along a third straight virtual line between the first transfer gate and the floating diffusion.
8. The imaging device according to claim 4 , wherein the trench gate sections extend into a region of a first conductivity type, the charge holding section is region of a second conductivity type.
9. The imaging device according to claim 8 , wherein the first conductivity type is P-type and the second conductivity type is N-type.
10. An imaging device, comprising:
a photoelectric conversion element configured to generate a charge in response to incident light;
a transfer gate configured to transfer the charge from the photoelectric conversion element to a charge holding section,
wherein the transfer gate includes a trench gate structure having at least two trench gate sections disposed in a depth direction of a semiconductor substrate and a connecting portion connecting the at least two trench gate sections, and
wherein at least a portion of the charge holding section is surrounded by the trench gate structure and is entirely underneath the connecting portion of the transfer gate.
11. The imaging device according to claim 10 , wherein the trench gate sections extend into a region of a first conductivity type, and the charge holding section is a region of a second conductivity type.
12. The imaging device according to claim 11 , wherein the first conductivity type is P-type and the second conductivity type is N-type.
13. The solid-state imaging device according to claim 2 , wherein the transfer gate further includes a light-shielding section.
14. The imaging device according to claim 4 , wherein the first transfer gate further includes a light-shielding section.
15. The imaging device according to claim 4 , wherein the semiconductor region of the charge holding section also serves as one of a source or a drain of the second transfer gate.
16. The imaging device according to claim 10 , wherein the transfer gate further includes a light-shielding section.