Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template
A nitride semiconductor template includes a substrate, and a chlorine-containing nitride semiconductor layer. The chlorine-containing nitride semiconductor layer contains an iron concentration of not higher than 1×10 17 cm −3 .
1. A nitride semiconductor template, comprising:
a substrate;
a buffer layer disposed on the substrate; and
a chlorine-containing nitride semiconductor layer,
wherein the chlorine-containing nitride semiconductor layer contains an Fe concentration of not higher than 9.0×10 15 cm −3 , a Cr concentration of not higher than 8.0×10 14 cm −3 , and a Ni concentration of not higher than 4.0×10 15 cm −3 , and
wherein the buffer layer comprises AlN.
2. The nitride semiconductor template according to claim 1 , wherein the substrate comprises a sapphire substrate.
3. The nitride semiconductor template according to claim 2 , wherein a full width at half maximum of a (0004) plane of X-ray diffraction is not less than 200 seconds and not more than 300 seconds.
4. The nitride semiconductor template according to claim 2 , wherein the chlorine-containing nitride semiconductor layer comprises a Si-doped GaN layer containing a Si concentration of not less than 5×10 18 cm −3 and not more than 5×10 19 cm −3 .
5. A nitride semiconductor template, comprising:
a substrate;
a buffer layer disposed on the substrate; and
a chlorine-containing nitride semiconductor layer; and
an undoped GaN layer disposed on the buffer layer,
wherein the chlorine-containing nitride semiconductor layer contains an Fe concentration of not higher than 9.0×10 15 cm −3 , a Cr concentration of not higher than 8.0×10 14 cm −3 , and a Ni concentration of not higher than 4.0×10 15 cm −3 .
6. The nitride semiconductor template according to claim 5 , wherein the chlorine-containing nitride semiconductor layer is disposed on the undoped GaN layer.
7. The nitride semiconductor template according to claim 6 , wherein the chlorine-containing nitride semiconductor layer comprises a Si-doped GaN layer.
8. The nitride semiconductor template according to claim 2 , wherein the chlorine-containing nitride semiconductor layer comprises a Si-doped GaN layer.
9. The nitride semiconductor template according to claim 2 , wherein the Fe concentration of the chlorine-containing nitride semiconductor layer is in a range from 7.0×10 14 cm −3 to 9.0×10 15 cm −3 .
10. A nitride semiconductor template, comprising:
a substrate;
a chlorine-containing nitride semiconductor layer; and
an undoped GaN layer disposed below the chlorine-containing nitride semiconductor layer,
wherein the chlorine-containing nitride semiconductor layer contains an Fe concentration of not higher than 9.0×10 15 cm −3 , a Cr concentration of not higher than 8.0×10 14 cm −3 , and a Ni concentration of not higher than 4.0×10 15 cm −3 , and
wherein an Fe concentration of the undoped GaN layer is in a range from 7.0×10 14 cm −3 to 9.0×10 15 cm −3 .
11. The nitride semiconductor template according to claim 10 , wherein the Cr concentration of the chlorine-containing nitride semiconductor layer is in a range from 6.0×10 13 cm −3 to 8.0×10 14 cm −3 .
12. The nitride semiconductor template according to claim 11 , wherein the Cr concentration of the undoped GaN layer is in a range from 6.0×10 13 cm −3 to 8.0×10 14 cm −3 .
13. The nitride semiconductor template according to claim 2 , wherein the Cr concentration of the chlorine-containing nitride semiconductor layer is in a range from 6.0×10 13 cm −3 to 8.0×10 14 cm −3 .
14. The nitride semiconductor template according to claim 2 , wherein the sapphire substrate comprises a Patterned Sapphire Substrate (PSS) in which an uneven surface is formed on the sapphire substrate.
15. The nitride semiconductor template according to claim 2 , wherein the chlorine-containing nitride semiconductor layer comprises an n-type GaN layer.
16. The nitride semiconductor template according to claim 15 , wherein the n-type GaN layer has a thickness of 3.5 μm to 8 μm on the sapphire substrate.
17. The nitride semiconductor template according to claim 15 , wherein the n-type GaN layer is doped with Si.
18. The nitride semiconductor template according to claim 15 , wherein a two-layer structure including is disposed on the n-type GaN layer.
19. The nitride semiconductor template according to claim 18 , wherein a Schottky electrode including a two-layer structure of Ni/Au is further disposed on the n-type GaN layer.
20. The nitride semiconductor template according to claim 10 , further comprising:
a buffer layer disposed on the substrate.