IP Library Assignment 037730/0397
Patent Assignment
Reel/Frame 037730/0397

Assignment of Assignor's Interest

Recorded: 2016-02-12 Pages: 5
Assignor
SCIOCS COMPANY LIMITED
Executed: 2016-01-20
Assignee
SUMITOMO CHEMICAL COMPANY, LIMITED
27-1, SHINKAWA 2-CHOME, CHUO-KU, TOKYO, 104-8260, JAPAN
Covered Properties (13)
Method for producing group III Nitride single crystal
Patent: 9,234,299 →
Application: 12/003,231 →
Publication: US 2009/0056618
Nitride-Based Semiconductor Substrate and Semiconductor Device
Patent: 9,246,049 →
Application: 12/222,907 →
Publication: US 2008/0315245
Nitride Semiconductor Free-Standing Substrate, Method of Manufacturing the Same and Nitride Semiconductor Device
Patent: 9,779,934 →
Application: 12/591,423 →
Publication: US 2011/0108944
Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device
Patent: 9,231,185 →
Application: 13/137,202 →
Publication: US 2012/0025667
Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device
Patent: 9,406,867 →
Application: 13/137,689 →
Publication: US 2012/0056508
Metal Chloride Gas Generator, Hydride Vapor Phase Epitaxy Growth Apparatus, and Nitride Semiconductor Template
Patent: 9,236,252 →
Application: 13/569,983 →
Publication: US 2013/0043442
Nitride Semiconductor Growth Substrate and Manufacturing Method of the Same, Nitride Semiconductor Epitaxial Substrate and Nitride Semiconductor Element
Application: 13/615,421 →
Publication: US 2013/0092950
Piezoelectric Element and Piezoelectric Device
Patent: 9,293,688 →
Application: 13/746,860 →
Publication: US 2013/0187516
Gallium Nitride Substrate and Optical Device Using the Same
Application: 13/781,568 →
Publication: US 2013/0230447
Metal Chloride Gas Generator, Hydride Vapor Phase Epitaxy Growth Apparatus, and Method for Fabricating a Nitride Semiconductor Template
Patent: 9,359,692 →
Application: 13/794,522 →
Publication: US 2013/0247817
Nitride Semiconductor Crystal Producing Method Including Growing Nitride Semiconductor Crystal Over Seed Crystal Substrate
Application: 14/163,967 →
Publication: US 2014/0196660
Piezoelectric Thin-Film Element, Piezoelectric Sensor and Vibration Generator
Patent: 9,620,703 →
Application: 14/212,821 →
Publication: US 2014/0285068
Metal Chloride Gas Generator, Hydride Vapor Phase Epitaxy Growth Apparatus, and Nitride Semiconductor Template
Application: 14/831,514 →
Publication: US 2015/0357416
Related Assignments (7)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Nov 19, 2009
From: FUJIKURA, HAJIME
To: HITACHI CABLE, LTD.
Reel/Frame 023589/0892 →
Assignment of Assignor's Interest Aug 10, 2012
From: KONNO, TAICHIROO; FUJIKURA, HAJIME; MATSUDA, MICHIKO
To: HITACHI CABLE, LTD.
Reel/Frame 028795/0088 →
Assignment of Assignor's Interest Sep 14, 2012
From: FUJIKURA, HAJIME; MATSUDA, MICHIKO; KONNO, TAICHIROO
To: HITACHI CABLE, LTD.
Reel/Frame 029024/0971 →
Assignment of Assignor's Interest Jan 24, 2013
From: SUENAGA, KAZUFUMI; SHIBATA, KENJI; WATANABE, KAZUTOSHI; NOMOTO, AKIRA
To: HITACHI CABLE, LTD.
Reel/Frame 029778/0628 →
Merger Feb 15, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 032268/0297 →
Assignment of Assignor's Interest Mar 19, 2014
From: SHIBATA, KENJI; NOGUCHI, MASAKI; SUENAGA, KAZUFUMI; WATANABE, KAZUTOSHI
To: HITACHI METALS, LTD.
Reel/Frame 032475/0905 →
Company Split Jul 24, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036181/0104 →