GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME
A gallium nitride substrate that a GaLα/CKα peak intensity ratio in EDX spectrum is not less than 2. The EDX spectrum is obtained in energy dispersive X-ray microanalysis (EDX) of a surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV.
1 . A gallium nitride substrate, wherein a GaLα/CKα peak intensity ratio in EDX spectrum is not less than 2, the EDX spectrum being obtained in energy dispersive X-ray microanalysis (EDX) of a surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV.
2 . The gallium nitride substrate according to claim 1 , wherein the GaLα/CKα peak intensity ratio in the EDX spectrum is not less than 3.
3 . An optical device, comprising:
a device structure formed on the gallium nitride substrate according to claim 1 .
4 . The optical device according to claim 3 , wherein the GaLα/CKα peak intensity ratio in the EDX spectrum is not less than 3.