Patent Assignment
Reel/Frame 036181/0104
Company Split
Recorded: 2015-07-24
Pages: 11
Assignor
HITACHI METALS, LTD.
Executed: 2015-04-01
Assignee
SCIOCS COMPANY LIMITED
880 ISAGOZAWA-CHO, HITACHI-SHI, IBARAKI-KEN, JAPAN
Covered Properties
(71)
Semiconductor Film Formation Device
Iii-V Group Nitride System Semiconductor Substrate
Iii-V Group Nitride System Semiconductor Self-Standing Substrate, Method of Making the Same and Iii-V Group Nitride System Semiconductor Wafer
Group Iii-V Nitride Series Semiconductor Substrate and Assessment Method Therefor
Iii-V Group Nitride System Semiconductor Self-Standing Substrate, Method of Making the Same and Iii-V Group Nitride System Semiconductor Wafer
Semiconductor Light Emitting Device
Iii-V Group Compound Semiconductor Device Including a Buffer Layer Having Iii-V Group Compound Semicondutor Crystal
Piezoelectric Thin Film Element
Nitride-Based Compound Semiconductor Substrate and Method for Fabricating the Same
Semiconductive Gaas Wafer and Method of Making the Same
Nitride-Based Semiconductor Substrate and Method of Making the Same
Nitride-Based Semiconductor Substrate and Semiconductor Device
Semiconductor Light-Emitting Device
Iii-V Group Nitride System Semiconductor Self-Standing Substrate, Method of Making the Same and Iii-V Group Nitride System Semiconductor Wafer
Transistor Epitaxial Wafer and Transistor Produced by Using Same
Nitride Semiconductor Light Emitting Element
Iii-V Group Nitride System Semiconductor Self-Standing Substrate, Method of Making the Same and Iii-V Group Nitride System Semiconductor Wafer
Group Iii Nitride Semiconductor Substrate
Iii-V Group Nitride System Semiconductor Substrate
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Method for Growing Nitride Semiconductor
Method for producing group III Nitride single crystal
Gan Single-Crystal Substrate and Method for Producing Gan Single Crystal
Light Emitting Device
Substrate with a Piezoelectric Thin Film
Piezoelectric Element
Laser Diode Expitaxial Wafer and Method for Producing Same
Nitride Semiconductor Free-Standing Substrate and Method for Making Same
Nitride-Based Semiconductor Substrate and Semiconductor Device
Semiconductor Light-Emitting Device
Nitride Semiconductor Free-Standing Substrateand Device Using the Same
Nitride Semiconductor Substrate
Nitride Semiconductor Epitaxial Wafer and Nitride Semiconductor Device
Light Emitting Device
Piezoelectric Thin Film Element Including Upper and Lower Electrodes, and an Actuator and a Sensor Fabricated by Using the Same
Method of Fabricating Group Iii Nitride Semiconductor Single Crystal, and Method of Fabricating Group Iii Nitride Semiconductor Single Crystal Substrate
Light Emitting Device and Method for Fabricating the Same Including a Back Surface Electrode with an Au Alloy
Nitride Semiconductor Sustrate and Method of Fabricating the Same.
Light-Emitting Element
Light-Emitting Element
Piezoelectric Thin Film Element
Nitride Semiconductor Free-Standing Substrate, Method of Manufacturing the Same and Nitride Semiconductor Device
Light Emitting Element Including Center Electrode and Thin Wire Electrode Extending from Periphery of the Center Electrode
Light-Emitting Device Epitaxial Wafer and Light-Emitting Device
Substrate with a Piezoelectric Thin Film
Laser Diode Epitaxial Wafer and Method for Producing Same
Compound semiconductor substrate production method
Group Iii-V Nitride Based Semiconductor Substrate and Method of Making Same
Semiconductor Light Emitting Element
Group Iii Nitride Semiconductor Free-Standing Substrate and Method of Manufacturing the Same, Group Iii Nitride Semiconductor Device and Method of Manufacturing the Same
Light Emitting Device
Nitride Semiconductor Substrate, Production Method Therefor and Nitride Semiconductor Device
Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device
Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device
Light-emitting element
Semiconductor Wafer and Semiconductor Device Wafer
Gallium Nitride Rectifying Device
Metal Chloride Gas Generator, Hydride Vapor Phase Epitaxy Growth Apparatus, and Nitride Semiconductor Template
Nitride Semiconductor Template and Light-Emitting Diode Including Oxygen-Doped Layer and Silicon-Doped Layer Formed on the Oxygen-Doped Layer
Piezoelectric Thin Film Element, and Piezoelectric Thin Film Device
Nitride Semiconductor Crystal Producing Method, Nitride Semiconductor Epitaxial Wafer, and Nitride Semiconductor Freestanding Substrate
Nitride Semiconductor Growth Substrate and Manufacturing Method of the Same, Nitride Semiconductor Epitaxial Substrate and Nitride Semiconductor Element
Application:
13/615,421 →
Publication:
US 2013/0092950
Nitride Semiconductor Template and Light-Emitting Diode
Piezoelectric Element and Piezoelectric Device
Gallium Nitride Substrate and Optical Device Using the Same
Application:
13/781,568 →
Publication:
US 2013/0230447
Metal Chloride Gas Generator, Hydride Vapor Phase Epitaxy Growth Apparatus, and Method for Fabricating a Nitride Semiconductor Template
Gallium Nitride Substrate and Epitaxial Wafer
Nitride Semiconductor Wafer for a High-Electron-Mobility Transistor and Its Use
Nitride Semiconductor Crystal Producing Method Including Growing Nitride Semiconductor Crystal Over Seed Crystal Substrate
Piezoelectric Thin-Film Element, Piezoelectric Sensor and Vibration Generator
Related Assignments
(19)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 2, 2004
From: HASEGAWA, MITSURU; MIYAUCHI, AKIHIRO; WATANABE, KAZUTOSHI; MEGURO, TAKESHI
To: HITACHI CABLE, LTD.
Reel/Frame 015620/0194 →
Assignment of Assignor's Interest
Aug 30, 2004
From: SHIBATA, MASATOMO
To: HITACHI CABLE, LTD.
Reel/Frame 015757/0370 →
Assignment of Assignor's Interest
Sep 30, 2004
From: SHIBATA, MASATOMO
To: HITACHI CABLE, LTD.
Reel/Frame 015863/0678 →
Assignment of Assignor's Interest
Feb 9, 2005
From: SHIBATA, MASATOMO
To: HITACHI CABLE, LTD.
Reel/Frame 016255/0805 →
Assignment of Assignor's Interest
Mar 16, 2005
From: SHIBATA, MASATOMO
To: HITACHI CABLE, LTD.
Reel/Frame 016370/0850 →
Assignment of Assignor's Interest
Mar 18, 2005
From: KAWAGUCHI, YUSUKE
To: HITACHI CABLE LTD.
Reel/Frame 016382/0331 →
Assignment of Assignor's Interest
Sep 15, 2005
From: ARAI, MASAHIRO; KONNO, TAICHIROO; IIZUKA, KAZUYUKI
To: HITACHI CABLE, LTD.
Reel/Frame 016807/0244 →
Assignment of Assignor's Interest
Dec 14, 2005
From: ISONO, RYOTA; TAKEUCHI, TAKASHI
To: HITACHI CABLE, LTD.
Reel/Frame 017364/0445 →
Assignment of Assignor's Interest
Mar 9, 2006
From: OSHIMA, YUICHI
To: HITACHI CABLE, LTD.
Reel/Frame 017660/0996 →
Assignment of Assignor's Interest
Apr 7, 2006
From: YABUKI, SHINJI; WACHI, MICHINORI; DAIHOU, KOUJI
To: HITACHI CABLE, LTD.
Reel/Frame 017786/0301 →
Assignment of Assignor's Interest
Apr 28, 2006
From: OSHIMA, YUICHI
To: HITACHI CABLE, LTD.
Reel/Frame 017835/0933 →
Assignment of Assignor's Interest
May 8, 2006
From: OSHIMA, YUICHI
To: HITACHI CABLE, LTD.
Reel/Frame 017878/0235 →
Assignment of Assignor's Interest
Jul 12, 2006
From: UNNO, TSUNEHIRO; AKIMOTO, KATSUYA; ARAI, MASAHIRO
To: HITACHI CABLE, LTD.
Reel/Frame 018102/0899 →
Request for Corrected Recordation of Assignment
Jul 14, 2006
From: SHIBATA, KENJI; SATO, HIDEKI
To: HITACHI CABLE, LTD.
Reel/Frame 018104/0887 →
Assignment of Assignor's Interest
Mar 9, 2007
From: MORIYA, YOSHIHIKO
To: HITACHI CABLE, LTD.
Reel/Frame 019017/0031 →
Assignment of Assignor's Interest
Mar 13, 2007
From: FUJIKURA, HAJIME
To: HITACHI CABLE, LTD.
Reel/Frame 023883/0331 →
Merger
Feb 15, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 032268/0297 →
Merger and Change of Name
Dec 15, 2014
From: HITACHI CABLE, LTD.; HITACHI METALS, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034630/0897 →
Assignment of Assignor's Interest
Feb 16, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037827/0453 →