III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer

1. A method of making a III-V group nitride system semiconductor self-standing substrate for a semiconductor laser, comprising:

providing a hetero-substrate that comprises a sapphire substrate that has a surface off-oriented by 0.07 degrees or more and 20 degrees or less in an m-axis direction from a C-face of the sapphire substrate;

growing an epitaxial layer of III-V group nitride system semiconductor single crystal on the hetero-substrate; and

separating the epitaxial layer from the hetero-substrate to have the III-V group nitride system semiconductor self-standing substrate with a predetermined off-orientation in an a-axis direction.

2. A method of making a III-V group nitride system semiconductor self-standing substrate for a semiconductor laser, comprising:

providing a hetero-substrate that comprises a sapphire substrate that has a surface off-oriented by 0.07 degrees or more and 20 degrees or less in an a-axis direction from C-face of the substrate;

growing an epitaxial layer of III-V group nitride system semiconductor single crystal on the hetero-substrate; and

separating the epitaxial layer from the hetero-substrate to have the III-V group nitride system semiconductor self-standing substrate with a predetermined off-orientation in an m-axis direction.

3. The method according to claim 1 , wherein the predetermined off-orientation of the III-V group nitride system semiconductor self-standing substrate is 0.09 degrees or more and 24.0 degrees or less.

4. The method according to claim 2 , wherein the predetermined off-orientation of the III-V group nitride system semiconductor self-standing substrate is 0.09 degrees or more and 24.0 degrees or less.

5. The method according to claim 1 , wherein an off-angle amount of the III-V group nitride system semiconductor self-standing substrate varies about 0.8 to 1.5 times that of the hetero substrate based on a linear relation.

6. The method according to claim 2 , wherein an off-angle amount of the III-V group nitride system semiconductor self-standing substrate varies about 0.8 to 1.5 times that of the hetero substrate based on a linear relation.

7. The method according to claim 1 , wherein the hetero-substrate has a surface off-oriented by 1 degree or more and 20 degrees or less.

8. The method according to claim 2 , wherein the hetero-substrate has a surface off-oriented by 1 degree or more and 20 degrees or less.

9. The method according to claim 1 , wherein the III-V group nitride system semiconductor self-standing substrate comprises In x Ga y Al 1−x−y N, wherein 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.

10. A method of making a III-V group nitride system semiconductor wafer comprising:

providing a hetero-substrate that comprises a sapphire substrate that has a surface off-oriented by 0.07 degrees or more and 20 degrees or less in one of an m-axis direction and an a-axis direction from a C-face of the sapphire substrate;

growing an epitaxial layer of III-V group nitride system semiconductor single crystal on the hetero-substrate;

separating the epitaxial layer from the hetero-substrate to have a III-V group nitride system semiconductor self-standing substrate, the substrate having a hexagonal crystal system crystalline structure and provided with a predetermined off-orientation in one of the m-axis direction and the a-axis direction from a C-face of the self-standing substrate; and

growing a III-V group nitride system semiconductor layer that is homo-epitaxially grown on the self-standing substrate.

11. The method according to claim 1 , wherein an in-plane dispersion of said predetermined off-orientation of said self-standing substrate is within ±1 degree.

12. The method according to claim 2 , wherein an in-plane dispersion of said predetermined off-orientation of said self-standing substrate is within ±1 degree.

13. The method according to claim 2 , wherein the III-V group nitride system semiconductor self-standing substrate comprises In x Ga y Al 1−x−y N, wherein 0≦x≦1,0≦y≦1, and 0≦x+y≦1.

14. The method according to claim 1 , wherein the III-V group nitride system semiconductor self-standing substrate has a thickness in a range from 200 μm to 1 mm.

15. The method according to claim 2 , wherein the III-V group nitride system semiconductor self-standing substrate has a thickness in a range from 200 μm to 1 mm.