Patent Assignment
Reel/Frame 037827/0453
Assignment of Assignor's Interest
Recorded: 2016-02-16
Pages: 7
Assignor
SCIOCS COMPANY LIMITED
Executed: 2016-01-20
Assignee
SUMITOMO CHEMICAL COMPANY, LIMITED
27-1, SHINKAWA 2-CHOME, CHUO-KU, TOKYO, 104-8260, JAPAN
Covered Properties
(59)
Semiconductor Film Formation Device
Iii-V Group Nitride System Semiconductor Substrate
Iii-V Group Nitride System Semiconductor Self-Standing Substrate, Method of Making the Same and Iii-V Group Nitride System Semiconductor Wafer
Group Iii-V Nitride Series Semiconductor Substrate and Assessment Method Therefor
Iii-V Group Nitride System Semiconductor Self-Standing Substrate, Method of Making the Same and Iii-V Group Nitride System Semiconductor Wafer
Semiconductor Light Emitting Device
Iii-V Group Compound Semiconductor Device Including a Buffer Layer Having Iii-V Group Compound Semicondutor Crystal
Piezoelectric Thin Film Element
Nitride-Based Compound Semiconductor Substrate and Method for Fabricating the Same
Semiconductive Gaas Wafer and Method of Making the Same
Nitride-Based Semiconductor Substrate and Method of Making the Same
Nitride-Based Semiconductor Substrate and Semiconductor Device
Semiconductor Light-Emitting Device
Iii-V Group Nitride System Semiconductor Self-Standing Substrate, Method of Making the Same and Iii-V Group Nitride System Semiconductor Wafer
Transistor Epitaxial Wafer and Transistor Produced by Using Same
Nitride Semiconductor Light Emitting Element
Iii-V Group Nitride System Semiconductor Self-Standing Substrate, Method of Making the Same and Iii-V Group Nitride System Semiconductor Wafer
Group Iii Nitride Semiconductor Substrate
Iii-V Group Nitride System Semiconductor Substrate
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Method for Growing Nitride Semiconductor
Gan Single-Crystal Substrate and Method for Producing Gan Single Crystal
Light Emitting Device
Substrate with a Piezoelectric Thin Film
Piezoelectric Element
Laser Diode Expitaxial Wafer and Method for Producing Same
Nitride Semiconductor Free-Standing Substrate and Method for Making Same
Semiconductor Light-Emitting Device
Nitride Semiconductor Free-Standing Substrateand Device Using the Same
Nitride Semiconductor Substrate
Nitride Semiconductor Epitaxial Wafer and Nitride Semiconductor Device
Light Emitting Device
Piezoelectric Thin Film Element Including Upper and Lower Electrodes, and an Actuator and a Sensor Fabricated by Using the Same
Method of Fabricating Group Iii Nitride Semiconductor Single Crystal, and Method of Fabricating Group Iii Nitride Semiconductor Single Crystal Substrate
Light Emitting Device and Method for Fabricating the Same Including a Back Surface Electrode with an Au Alloy
Nitride Semiconductor Sustrate and Method of Fabricating the Same.
Light-Emitting Element
Light-Emitting Element
Piezoelectric Thin Film Element
Light Emitting Element Including Center Electrode and Thin Wire Electrode Extending from Periphery of the Center Electrode
Light-Emitting Device Epitaxial Wafer and Light-Emitting Device
Substrate with a Piezoelectric Thin Film
Laser Diode Epitaxial Wafer and Method for Producing Same
Compound semiconductor substrate production method
Group Iii-V Nitride Based Semiconductor Substrate and Method of Making Same
Semiconductor Light Emitting Element
Group Iii Nitride Semiconductor Free-Standing Substrate and Method of Manufacturing the Same, Group Iii Nitride Semiconductor Device and Method of Manufacturing the Same
Light Emitting Device
Nitride Semiconductor Substrate, Production Method Therefor and Nitride Semiconductor Device
Light-emitting element
Semiconductor Wafer and Semiconductor Device Wafer
Gallium Nitride Rectifying Device
Nitride Semiconductor Template and Light-Emitting Diode Including Oxygen-Doped Layer and Silicon-Doped Layer Formed on the Oxygen-Doped Layer
Piezoelectric Thin Film Element, and Piezoelectric Thin Film Device
Nitride Semiconductor Crystal Producing Method, Nitride Semiconductor Epitaxial Wafer, and Nitride Semiconductor Freestanding Substrate
Nitride Semiconductor Template and Light-Emitting Diode
Gallium Nitride Substrate and Epitaxial Wafer
Nitride Semiconductor Wafer for a High-Electron-Mobility Transistor and Its Use
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 13, 2007
From: FUJIKURA, HAJIME
To: HITACHI CABLE, LTD.
Reel/Frame 023883/0331 →
Merger
Feb 15, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 032268/0297 →
Merger and Change of Name
Dec 15, 2014
From: HITACHI CABLE, LTD.; HITACHI METALS, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034630/0897 →
Company Split
Jul 24, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036181/0104 →