Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same
View Patent ↗A group III nitride semiconductor free-standing substrate includes an as-grown surface, more than half of a region of the as-grown surface including a single crystal plane. The single crystal plane includes an off-angle inclined in an m-axis or a-axis direction from a C-plane with a group III polarity, or in a c-axis or a-axis direction from an M-plane.
1. A group III nitride semiconductor free-standing substrate, comprising:
an as-grown surface, more than half a region of the as-grown surface comprising a single crystal face,
wherein said single crystal face comprises an off-angle in a c-axis direction or an a-axis direction from a M-plane with a group III polarity.
2. A group III nitride semiconductor device, comprising:
a group III nitride semiconductor layer over the group III nitride semiconductor free-standing substrate according to claim 1 .
3. A group III nitride semiconductor free-standing substrate, comprising:
an as-grown surface, more than half a region of the as-grown surface comprising a single crystal face,
wherein said single crystal face comprises an off-angle in an m-axis direction from a C-plane with a group III polarity.
4. A group III nitride semiconductor device, comprising
a group III nitride semiconductor layer over the group III nitride semiconductor free-standing substrate according to claim 3 .
5. The group III nitride semiconductor free-standing substrate according to claim 3 , wherein the as-grown surface comprises a crystal surface in a state that a crystal is grown other than being subjected to a grinding and a polishing thereon.
6. A group III nitride semiconductor free-standing substrate, comprising:
an as-grown surface, more than half a region of the as-grown surface comprising a single crystal face,
wherein said single crystal face comprises an off-angle in an a-axis direction from a C-plane with a group III polarity.
7. A group III nitride semiconductor device, comprising
a group III nitride semiconductor layer over the group III nitride semiconductor free-standing substrate according to claim 6 .
8. The group III nitride semiconductor free-standing substrate according to claim 6 , wherein the as-grown surface comprises a crystal surface in a state that a crystal is grown other than being subjected to a grinding and a polishing thereon.
9. The group III nitride semiconductor free-standing substrate according to claim 1 , wherein the off-angle is in the c-axis direction from the M-plane.
10. The group III nitride semiconductor free-standing substrate according to claim 1 , wherein the off-angle is in the a-axis direction from the M-plane.
11. The group III nitride semiconductor free-standing substrate according to claim 1 , wherein the as-grown surface comprises a crystal surface in a state that a crystal is grown other than being subjected to a grinding and a polishing thereon.