Semiconductor light emitting element

1. A semiconductor light emitting element, comprising:

a group III-V compound semiconductor layer comprising a light emitting layer, a first main surface comprising a light extraction surface formed thereon, and a second main surface;

a reflection metal film formed on the second main surface for reflecting a light emitted from the light emitting layer toward the light extraction surface;

a support substrate joined to the group III-V compound semiconductor layer via the reflection metal film;

a front surface electrode formed on the first main surface;

an ohmic contact joint part formed between the reflection metal film and the group III-V compound semiconductor layer except a region directly under the front surface electrode; and

a front surface side contact part and a transparent dielectric reflection part formed between the group III-V compound semiconductor layer and the front surface electrode,

wherein the semiconductor light emitting element further comprises a quadrangular shape of not more than 320 μm on a side,

wherein the front surface electrode comprises a polygonal shape or a circular shape and an outer peripheral length of not less than 235 μm and not more than 700 μm, and

wherein the ohmic contact joint part is disposed in a side of an outer peripheral part of the semiconductor light emitting element, formed so as to surround the front surface electrode when the ohmic contact joint part is viewed from a side of the front surface electrode, and disposed so that distance from each location of outer edge parts of the front surface electrode to the ohmic contact joint part nearest to the each location becomes equal to each other.

2. The semiconductor light emitting element according to claim 1 , further comprising:

a transparent dielectric film formed between the group III-V compound semiconductor layer and the reflection metal film,

wherein the ohmic contact joint part is formed in a part of the transparent dielectric film so as to pass through the transparent dielectric film.

3. The semiconductor light emitting element according to claim 1 , wherein the front surface side contact part is formed in a region whose outer peripheral length is not less than 5 μm and not more than 30 μm, and the transparent dielectric reflection part is formed inside the front surface side contact part.

4. The semiconductor light emitting element according to claim 1 , wherein the transparent dielectric reflection part comprises SiO 2 , SiN or ITO.

5. The semiconductor light emitting element according to claim 1 , wherein the transparent dielectric reflection part has a refractive index of not more than 2.3.

6. The semiconductor light emitting element according to claim 1 , wherein the light extraction surface comprises a concavo-convex shape of not less than 100 nm in height.

7. The semiconductor light emitting element according to claim 1 , wherein the ohmic contact joint part comprises a strip portion that is shaped similarly to the polygonal shape or the round shape of the front surface electrode, and is arranged concentrically with the front surface electrode in top view.

8. The semiconductor light emitting element according to claim 6 , wherein the light extraction surface is covered with a transparent film.