Semiconductor light-emitting device

1. A light-emitting diode, comprising:

a substrate;

a light-emitting part formed on a front side of the substrate, the light-emitting part comprising a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially;

a first current-blocking portion partially formed on a middle portion of the light-emitting part;

a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion;

a lower electrode formed on a back side of the substrate;

a light-reflecting layer formed between the substrate and the light-emitting part, the light-reflecting layer comprising a metal;

a bonding layer formed between the substrate and the light-reflecting layer, the bonding layer comprising a metal;

a partial electrode formed on a surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion, the partial electrode comprising a Au-based metal; and

a second current-blocking portion formed over the surface of the light-reflecting layer excluding a portion of the light-reflecting layer in which the partial electrode is formed, the second current-blocking portion comprising a silicon-based insulating material,

wherein the partial electrode and the second current-blocking portion are provided between the light-emitting part and the light-reflecting layer.

2. The light-emitting diode according to claim 1 , wherein a sheet resistance of the second conductivity type cladding layer is higher than a sheet resistance of the first conductivity type cladding layer.

3. The light-emitting diode according to claim 1 , wherein the light-reflecting layer comprises a layer including an alloy comprising at least one of Ag, Au, or Al, or a composite layer of at least one of Ag, Au or Al.

4. The light-emitting diode according to claim 1 , wherein the active layer comprises a multi-quantum-well structure.

5. The light-emitting diode according to claim 1 , wherein the current-conducting portion comprises:

a current-spreading layer provided over the first current-blocking portion and the second conductivity type cladding layer; and

an upper electrode provided on the current-spreading layer.

6. The light-emitting diode according to claim 5 , wherein the current-spreading layer comprises a transparent conductive film.

7. The light-emitting diode according to claim 1 , wherein the current-conducting portion comprises a member selected from a group consisting of a current spreading portion, an upper electrode, a branching electrode, and combinations thereof.

8. The light-emitting diode of claim 1 , wherein the light-reflecting layer is provided directly on opposite surfaces of the partial electrode and the second current-blocking portion, with respect to the light-emitting part.

9. The light-emitting diode of claim 1 , wherein the light-reflecting layer is provided on opposite surfaces of the partial electrode and the second current-blocking portion, with respect to the light-emitting part.

10. The light-emitting diode according to claim 1 , further comprising:

first and second diffusion-inhibiting layers sandwiching the bonding layer therebetween.

11. The light-emitting diode according to claim 1 , further comprising an electrode formed directly on the substrate.