Semiconductor light-emitting device

1. A semiconductor light-emitting device, comprising:

a support structure; and

a light-emitting structure,

wherein the support structure comprises:

a support substrate; and

a support substrate side bonding layer disposed on one surface of the support substrate,

wherein the light-emitting structure comprises:

a light-emitting structure side bonding layer bonded to the support substrate side bonding layer;

a reflection region is disposed on the light-emitting structure side bonding layer opposite the support substrate; and

a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface roughened and disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light,

wherein the reflection region includes a transparent layer comprising a material having electrical insulation with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer comprising a metallic material,

wherein the transparent layer has such a thickness that an interference caused by multiple reflection of light inputted to the transparent layer is suppressed, and has a thickness of at least about half of a value obtained by dividing a central wavelength of light emitted from the light-emitting layer by a refractive index of the transparent layer, and

wherein the transparent layer has a refractive index of about 1.3 to about 3.0, and a thickness of not less than about ¾ of the value obtained by said dividing the central wavelength by the refractive index.

2. A semiconductor light-emitting device, comprising:

a support structure; and

a light-emitting structure,

wherein the support structure comprises:

a support substrate; and

a support substrate side bonding layer disposed on one surface of the support substrate,

wherein the light-emitting structure comprises:

a light-emitting structure side bonding layer bonded to the support substrate side bonding layer;

a reflection region disposed on the light-emitting structure side bonding layer opposite the support substrate; and

a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface roughened and disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light,

wherein the reflection region includes a transparent layer comprising a material having electrical insulation with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer comprising a metallic material,

wherein the transparent layer has such a thickness that an interference caused by multiple reflection of light inputted to the transparent layer is suppressed, and has a thickness of at least about half of a value obtained by dividing a central wavelength of light emitted from the light-emitting layer by a refractive index of the transparent layer, and

wherein the transparent layer comprises a refractive index of about 1.2 to about 3.0, and a thickness of not less than about 5/4 of the value obtained by said dividing the central wavelength by the refractive index.

3. A semiconductor light-emitting device, comprising:

a support structure; and

a light-emitting structure,

wherein the support structure comprises:

a support substrate; and

a support substrate side bonding layer disposed on one surface of the support substrate,

wherein the light-emitting structure comprises:

a light-emitting structure side bonding layer bonded to the support substrate side bonding layer;

a reflection region disposed on the light-emitting structure side bonding layer opposite the support substrate; and

a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface roughened and disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light,

wherein the reflection region includes a transparent layer comprising a material having electrical insulation with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer comprising a metallic material,

wherein the transparent layer has such a thickness that an interference caused by multiple reflection of light inputted to the transparent layer is suppressed, and has a thickness of at least about half of a value obtained by dividing a central wavelength of light emitted from the light-emitting layer by a refractive index of the transparent layer,

wherein the light-emitting structure further comprises an interface electrode between the reflection layer and the semiconductor multilayer structure, the interface electrode connecting electrically a surface of the semiconductor multilayer structure opposite the light-extraction surface to the reflection layer,

wherein the semiconductor multilayer structure further comprises a surface electrode on a part of a surface thereof where the light-extraction surface is formed,

wherein the support substrate comprises a back electrode on a surface thereof opposite the support substrate side bonding layer, and

wherein the interface electrode is formed in an area not more than 30% of a surface of the semiconductor multilayer structure on a side of the reflection layer.

4. A semiconductor light-emitting device, comprising:

a support structure; and

a light-emitting structure,

wherein the support structure comprises:

a support substrate; and

a support substrate side bonding layer disposed on one surface of the support substrate,

wherein the light-emitting structure comprises:

a light-emitting structure side bonding layer bonded to the support substrate side bonding layer;

a reflection region disposed on the light-emitting structure side bonding layer opposite the support substrate; and

a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface roughened and disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light,

wherein the reflection region includes a transparent layer comprising a material having electrical insulation with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer comprising a metallic material,

wherein the transparent layer has such a thickness that an interference caused by multiple reflection of light inputted to the transparent layer is suppressed, and has a thickness of at least about half of a value obtained by dividing a central wavelength of light emitted from the light-emitting layer by a refractive index of the transparent layer, and

wherein the light-extraction surface includes an unsmooth surface that has an arithmetic average roughness not less than about ¼ of a value obtained by dividing a wavelength of the light by a refractive index of a semiconductor layer composing the light-extraction surface, and at least an angle being not zero and defined by a normal line of an average surface of the light-extraction surface and a normal line of a surface of the light-extraction surface.