IP Library Granted Patent US 8,063,543
Granted Patent B2
US 8,063,543 · App. 12/453,929 · Granted Nov 22, 2011

Piezoelectric thin film element including upper and lower electrodes, and an actuator and a sensor fabricated by using the same

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Quick Facts
Patent No.
US 8,063,543
App. No.
12/453,929
Granted
Nov 22, 2011
Kind
B2
Abstract

A piezoelectric thin film element includes a substrate, a lower electrode, a piezoelectric thin film, and an upper electrode. The lower electrode, the piezoelectric thin film and the upper electrode are formed on the substrate. The piezoelectric thin film includes a polycrystal thin film including crystal grains, an alkali niobium oxide based perovskite structure represented by a general formula: (K 1-x Na x )NbO 3 (0.4<x<0.7), a film thickness of not less than 1 μm and not more than 10 μm, a columnar structure configured by the crystal grains, a majority of the crystal grains including a shape in a cross-section direction thereof longer than in a plane direction of the substrate, and an average crystal grain size of not less than 0.1 μm and not more than 1.0 μm in the plane direction of the substrate.

Claims (16)

1. A piezoelectric thin film element, comprising:

a substrate;

a lower electrode;

a piezoelectric thin film; and

an upper electrode,

wherein the lower electrode, the piezoelectric thin film and the upper electrode are formed on the substrate, and

wherein the piezoelectric thin film comprises:

a polycrystal thin film including crystal grains;

an alkali niobium oxide based perovskite structure represented by a general formula: (K 1-x Na x )NbO 3, wherein 0.4<x<0.7;

a film thickness of not less than 1 μm and not more than 10 μm;

a columnar structure configured by the crystal grains, a majority of the crystal grains including a length in a cross-section direction thereof longer than in a plane direction of the substrate; and

an average crystal grain size of not less than 0.1 μm and not more than 1.0 μm in the plane direction of the substrate.

2. The piezoelectric thin film element according to claim 1 , wherein the piezoelectric thin film comprises a pseudocubic or tetragonal polycrystal thin film and is dominantly oriented in a plane orientation (001).

3. The piezoelectric thin film element according to claim 1 , wherein the substrate comprises a silicon substrate, and the lower electrode comprises a platinum electrode.

4. An actuator produced by using the piezoelectric thin film element according to claim 1 .

5. A sensor produced by using the piezoelectric thin film element according to claim 1 .

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 16, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037827/0453 →
COMPANY SPLIT Recorded Jul 24, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036181/0104 →
MERGER AND CHANGE OF NAME Recorded Dec 15, 2014
From: HITACHI CABLE, LTD.; HITACHI METALS, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034630/0897 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2009
From: SHIBATA, KENJI; OKA, FUMIHITO
To: HITACHI CABLE, LTD.
Reel/Frame 022781/0099 →