Semiconductor light emitting device
View Patent ↗A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×10 19 /cm 3 or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III–V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.
1. A semiconductor light emitting device, comprising:
a semiconductor substrate;
a semiconductor layer comprising an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer comprises an As-based material and is located at the top of the semiconductor layer and doped with a p-type dopant comprising zinc at a concentration of 1×10 19 /cm 3 or more;
a current spreading layer formed on the semiconductor layer and comprising a metal oxide material; and
a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer,
wherein the diffusion prevention layer comprises a group III–V semiconductor that comprises phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.
2. The semiconductor light emitting device according to claim 1 , wherein:
the current spading layer comprises indium tin oxide (ITO).
3. The semiconductor light emitting device according to claim 2 , wherein:
the current spreading layer comprises a thickness D to satisfy (7/10)d≦D≦(13/10)d, where a thickness d of an ideal current spreading layer is d=A×λ p /(4×n), A: a constant, λ p : an emission peak wavelength of the light emitting device, and n: a refractive index of the current spreading layer, and the constant A is a positive odd number.
4. The semiconductor light emitting device according to claim 3 , wherein:
the current spreading layer has a carrier concentration of 8×10 20 /cm 3 or more.
5. The semiconductor light emitting device according to claim 4 , wherein:
the n-type cladding layer, the active layer and the p-type cladding layer are composed of (Al X Ga 1-X ) Y In 1−Y P, where 0≦X≦1 and 0.4≦Y≦0.6 are satisfied.
6. The semiconductor light emitting device according to claim 5 , wherein:
the p-type contact layer doped with the p-type dopant comprising zinc at a carrier concentration of 1×10 19 /cm 3 or more is composed of Al X Ga 1-X As, where 0≦X≦0.2 is satisfied.
7. The semiconductor light emitting device according to claim 6 , wherein:
the p-contact layer has a thickness of 1 nm or more and 30 nm or less.
8. The semiconductor light emitting device according to claim 7 , wherein:
the diffusion prevention layer has a thickness of 0.5 μm or more and 5 μm or less.
9. The semiconductor light emitting device according to claim 8 , wherein:
the diffusion prevention layer is optically transparent to an emission wavelength of the semiconductor light emitting device.
10. The semiconductor light emitting device according to claim 9 , wherein:
the diffusion prevention layer is composed of AlInP or AlGaInP.
11. The semiconductor light emitting device according to claim 3 , wherein:
the current spreading layer is formed by vacuum deposition or sputtering.
12. The semiconductor light emitting device according to claim 4 , wherein:
the current spreading layer has the carrier concentration of 8×10 20 /cm 3 or more just after the current spreading layer is formed.