Nitride-based semiconductor substrate and method of making the same

1. A nitride-based semiconductor substrate, comprising:

a diameter of 25 mm or more;

a thickness of 250 micrometers or more;

an optical absorption coefficient of less than 7 cm −1 to light with a predetermined wavelength that is equal to or greater than 380 nm, and

an electrical resistivity of 0.02 Ωcm or less.

2. The nitride-based semiconductor substrate according to claim 1 , further comprising:

a dislocation density of 1×10 7 cm −2 or less.

3. The nitride-based semiconductor substrate according to claim 1 , further comprising:

an impurity concentration of 1×10 17 cm −3 or less in relation to any of As, O, Cl, P, Na, K, Li, Ca, Sn, Ti, Fe, Cr and Ni.

4. The nitride-based semiconductor substrate according to claim 1 , wherein the electrical resistivity does not fall below 0.001 Ωcm.

5. The nitride-based semiconductor substrate according, to claim 1 , further comprising:

a carrier concentration having a range from 1×10 17 cm −3 to 1×10 19 cm −3 .

6. The nitride-based semiconductor substrate according to claim 1 , further comprising:

an oxygen impurity concentration having a range from 10 16 cm −3 to 10 18 cm −3 .

7. The nitride-based semiconductor substrate according to claim 1 , further comprising:

an iron impurity concentration having a range from 10 14 cm −3 to 10 17 cm −3 .

8. The nitride-based semiconductor substrate according to claim 1 , further comprising:

a Ga melt-hydrogen chloride gas reaction lasting for a period equal to or greater than one minute.