Light-emitting device epitaxial wafer and light-emitting device
View Patent ↗A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.
1. A light-emitting device epitaxial wafer, comprising:
an n-type substrate;
an n-type cladding layer stacked on the n-type substrate;
a light-emitting layer comprising a quantum well structure stacked on the n-type cladding layer; and
a p-type cladding layer stacked on the light-emitting layer,
wherein the n-type cladding layer comprises an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness, and
wherein the epitaxial layer doped with a mixture of 2 or more n-type dopants including Si is formed to gradually increase the Si concentration from its n-type substrate side to light-emitting layer side, while gradually decreasing the concentration of the n-type dopant other than Si from the n-type substrate side to light-emitting layer side.
2. A light-emitting device produced using the light-emitting device epitaxial wafer according to claim 1 .
3. A light-emitting device epitaxial wafer, comprising:
an n-type substrate;
an n-type cladding layer stacked on the n-type substrate;
a light-emitting layer comprising a quantum well structure stacked on the n-type cladding layer; and
a p-type cladding layer stacked on the light-emitting layer,
wherein the n-type cladding layer comprises an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness, and
wherein the n-type dopants of the epitaxial layer doped with a mixture of 2 or more n-type dopants including Si are Si and Se, and the amount of Se doping is not less than 20% and not more than 80% relative to the total amount of Si and Se doping.
4. A light-emitting device epitaxial wafer, comprising:
an n-type substrate;
an n-type cladding layer stacked on the n-type substrate;
a light-emitting layer comprising a quantum well structure stacked on the n-type cladding layer; and
a p-type cladding layer stacked on the light-emitting layer,
wherein the n-type cladding layer comprises an n-type first cladding layer doped with an n-type dopant other than Si, and an n-type second cladding layer doped with Si as an n-type dopant, and the entire thickness of the n-type cladding layer is not less than 250 nm and not more than 750 nm, and
wherein the n-type dopant of the n-type first cladding layer is Se, and the Se-doped n-type first cladding layer has not less than 25% and not more than 80% of the total thickness of the n-type cladding layer.
5. A light-emitting device epitaxial wafer, comprising:
an n-type substrate;
an n-type cladding layer stacked on the n-type substrate;
a light-emitting layer comprising a quantum well structure stacked on the n-type cladding layer; and
a p-type cladding layer stacked on the light-emitting layer,
wherein the n-type cladding layer comprises an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness, and
wherein the light-emitting layer with the quantum well structure comprises an AlGaInP (0≦Al mixed crystal ratio≦0.35) well layer, and the well layer thickness is not less than 2.5 nm and not more than 6.5 nm, and the carrier concentration in the n-type cladding layer is not less than 2.5×10 17 cm −3 and not more than 7.0×10 17 cm −3 .
6. A light-emitting device epitaxial wafer, comprising:
an n-type substrate;
an n-type cladding layer stacked on the n-type substrate;
a light-emitting layer stacked on the n-type cladding layer; and
a p-type cladding layer stacked on the light-emitting layer,
wherein the n-type cladding layer comprises 2 or more n-type impurities including Si,
the n-type cladding layer comprises an epitaxial layer doped with a mixture of 2 or more n-type impurities including Si, and
the n-type impurities are Si and Se, and the amount of Se doping is not less than 20% and not more than 80% relative to the total amount of Si and Se doping.
7. A light-emitting device produced using the light-emitting device epitaxial wafer according to claim 6 .
8. A light-emitting device epitaxial wafer, comprising:
an n-type substrate;
an n-type cladding layer stacked on the n-type substrate;
a light-emitting layer stacked on the n-type cladding layer; and
a p-type cladding layer stacked on the light-emitting layer,
wherein the n-type cladding layer comprises 2 or more n-type impurities including Si,
the n-type cladding layer comprises an epitaxial layer doped with a mixture of 2 or more n-type impurities including Si,
the n-type impurities are Si and Se, and the amount of Se doping is not less than 20% and not more than 80% relative to the total amount of Si and Se doping, and
the Si concentration in the n-type cladding layer is gradually increased from its n-type substrate side, while the concentration of the n-type impurity other than Si in the n-type cladding layer is gradually decreased from the n-type substrate side, and the carrier concentration in the n-type cladding layer is not less than 3.5×10 17 cm −3 and not more than 8.0×10 17 cm −3 .