Method for producing group III nitride single crystal
View Patent ↗A method for producing a group III nitride single crystal (ingot) includes providing a seed crystal comprising a first crystal face that is perpendicular to a growth direction of the single crystal and has a first predetermined area, and a second crystal face that is inclined to the growth direction and has a second predetermined area and growing the group III nitride single crystal on the first crystal face and the second crystal face by controlling a growth condition of the single crystal so as not to change the first predetermined area and the second predetermined area. A method for producing a group III nitride single crystal substrate includes further cutting the group III nitride single crystal substrate off from the grown group III nitride single crystal (ingot).
1. A method for producing a group III nitride single crystal, the method comprising:
providing a seed crystal comprising a first crystal face that is perpendicular to a growth direction of the single crystal and has a first predetermined area, and a second crystal face that is inclined to the growth direction and has a second predetermined area; and
growing the group III nitride single crystal on the first crystal face and the second crystal face by vapor phase growth and by controlling a growth condition of the single crystal so as not to change the first predetermined area and the second predetermined area.
2. The method according to claim 1 , wherein the first crystal face comprises a (0001) plane, and
wherein the second crystal face comprises a (10-12) plane.
3. The method according to claim 1 , wherein the growth condition comprises a growth condition that a shape of the group III nitride single crystal comprising the first crystal face and the second crystal face comprises an equilibrium form.
4. The method according to claim 1 , wherein the growth condition comprises a same growth condition as that for growing the seed crystal.
5. The method according to claim 1 , wherein the group III nitride single crystal comprises Al x Ga 1-x N (0≦x≦1).
6. A method for producing a group III nitride single crystal substrate, the method comprising:
providing a seed crystal comprising a first crystal face that is perpendicular to a growth direction of a group III nitride single crystal ingot and has a first predetermined area and a second crystal face that is inclined to the growth direction and has a second predetermined area;
growing the group III nitride single crystal ingot on the first crystal face and the second crystal face by vapor phase growth and by controlling a growth condition of the group III nitride single crystal ingot so as not to change the first predetermined area and the second predetermined area; and
cutting the group III nitride single crystal substrate off from the grown group III nitride single crystal ingot.
7. The method according to claim 6 , wherein the first crystal face comprises a (0001) plane.
8. The method according to claim 6 , wherein the growth condition is such that a shape of the group III nitride single crystal ingot comprising the first crystal face and the second crystal face comprises an equilibrium form.
9. The method according to claim 6 , wherein the seed crystal comprises a (0001) plane.
10. The method according to claim 6 , wherein the vapor phase growth comprises an HVPE (halide vapor phase epitaxy) growth.
11. The method according to claim 1 , wherein the first crystal face comprises a (0001) plane.
12. The method according to claim 1 , wherein the seed crystal comprises a (0001) plane.
13. The method according to claim 1 , wherein the vapor phase growth comprises an HVPE (halide vapor phase epitaxy) growth.