Piezoelectric element and piezoelectric device

1. A piezoelectric element, comprising:

a substrate; and

at least a lower electrode layer, a piezoelectric film represented by a general formula of (NaxKyLiz)NbO 3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and an upper electrode layer successively formed on the substrate,

wherein the piezoelectric film includes a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, or a rhombohedral crystal, or has a state that at least two of the crystal structures coexist,

wherein the piezoelectric film is preferentially oriented to two crystal axes in the crystal structures, and

wherein components of crystal axes oriented of the piezoelectric film consist essentially of a c-axis orientation domain crystal component and an a-axis orientation domain crystal component.

2. The piezoelectric element according to claim 1 , wherein a quantitative relationship between the c-axis orientation domain crystal component and the a-axis orientation domain crystal component as the components of the oriented crystal axes of the piezoelectric film is configured such that, if total component ratios of both of the components are defined as 100%, the component ratio of the c-axis orientation domain crystal component falls within a range of 10 to 90%, and the component ratio of the a-axis orientation domain crystal component falls within the range of 90 to 10%.

3. The piezoelectric element according to claim 1 , wherein the piezoelectric film includes an aggregate structure comprising particles including a columnar structure.

4. The piezoelectric element according to claim 1 , wherein the piezoelectric film comprises a crystal or an amorphia represented by a general formula of ABO 3 , or a mixture of the crystal and the amorphia in at least a part thereof, where A represents at least one element selected from the group consisting of Li, Na, K, Pb, La, Sr, Nd, Ba, and Bi, and B represents at least one element selected from the group consisting of Zr, Ti, Mn, Mg, Nb, Sn, Sb, Ta, and In, and O represents oxygen.

5. The piezoelectric element according to claim 1 , wherein the lower electrode layer comprises an electrode layer comprising Pt or an alloy containing Pt as a main component, or an electrode layer comprising a multilayer structure including a layer comprising Pt as a main component.

6. The piezoelectric element according to claim 1 , wherein the lower electrode layer comprises an electrode layer comprising a multilayer structure including a layer comprising at least one element selected from the group consisting of Ru, Ir, Sn, and In, an oxide of the elements, or a compound between elements contained in the piezoelectric film and elements of Ru, Ir, Sn, and In.

7. The piezoelectric element according to claim 1 , wherein the upper electrode layer comprises an electrode layer comprising Pt or an alloy containing Pt as a main component, or an electrode layer comprising a multilayer structure including a layer comprising Pt as a main component.

8. The piezoelectric element according to claim 1 , wherein the upper electrode layer comprises a multilayer structure including a layer comprising at least one element selected from the group consisting of Ru, Ir, Sn, and In, an oxide of the elements, or a compound between elements contained in the piezoelectric film and elements of Ru, Ir, Sn, and In.

9. The piezoelectric element according to claim 1 , wherein the lower electrode layer comprises a single layer structure or a multilayer structure, and the lower electrode layer is preferentially oriented in a direction perpendicular to a surface of the substrate in the crystal orientation.

10. The piezoelectric element according to claim 1 , wherein the substrate comprises a crystal or an amorphia of Si, MgO, ZnO, SrTiO 3 , SrRuO 3 , glass, quartz glass, GaAs, GaN, sapphire, Ge, or stainless, or a composite thereof.

11. A piezoelectric device, comprising:

the piezoelectric element according to claim 1 ; and

a voltage detecting device connected between the lower electrode layer and the upper electrode layer of the piezoelectric element,

wherein the c-axis orientation domain crystal component is more than the a-axis orientation domain crystal component.

12. A sensor, comprising:

the piezoelectric device according to claim 11 .

13. A piezoelectric device, comprising:

the piezoelectric element according to claim 1 ; and

a voltage applying device connected between the lower electrode layer and the upper electrode layer of the piezoelectric element,

wherein the a-axis orientation domain crystal component is more than the c-axis orientation domain crystal component.

14. An actuator, comprising:

the piezoelectric device according to claim 13 .

15. The piezoelectric element according to claim 1 , wherein the piezoelectric film has the state that the at least two of the crystal structures coexist.

16. The piezoelectric element according to claim 1 , wherein the a-axis orientation domain crystal component is more than the c-axis orientation domain crystal component.

17. The piezoelectric element according to claim 1 , wherein the c-axis orientation domain crystal component is more than the a-axis orientation domain crystal component.

18. A piezoelectric device, comprising:

the piezoelectric element according to claim 1 ,

wherein the c-axis orientation domain crystal component is more than the a-axis orientation domain crystal component.

19. A piezoelectric device, comprising:

the piezoelectric element according to claim 1 ,

wherein the a-axis orientation domain crystal component is more than the c-axis orientation domain crystal component.