Hybrid Silicon Lasers on Bulk Silicon Substrates
Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.
1 . A hybrid silicon laser comprising:
a bulk silicon substrate;
a localized insulating layer extending on at least a portion of a surface of the bulk silicon substrate;
an optical waveguide structure on a surface of the localized insulating layer and including an optical waveguide as a silicon layer; and
a lasing structure on the optical waveguide structure.
2 . The hybrid silicon laser of claim 1 , wherein the localized insulating layer comprises a buried insulating layer buried in a bulk trench in the bulk silicon substrate.
3 . The hybrid silicon laser of claim 1 , wherein the silicon layer comprises a crystallized silicon layer.
4 . The hybrid silicon laser of claim 1 , wherein a center point of the optical waveguide is deviated from a center point of the localized insulating layer.
5 . The hybrid silicon laser of claim 1 , wherein the lasing structure comprises a Group III-V semiconductor gain layer coupled to the optical waveguide structure.
6 . (canceled)
7 . The hybrid silicon laser of claim 1 , wherein the lasing structure comprises one of a mesa type structure and a ridge type structure.
8 . The hybrid silicon laser of claim 1 , wherein the lasing structure comprises a light-emitting composite layer and a clad layer that is formed on the light-emitting composite layer.
9 . The hybrid silicon laser of claim 1 , wherein a buffer layer for crystal growth I provided on the optical waveguide structure.
10 . The hybrid silicon laser of claim 1 , wherein a combining medium layer for combining the lasing structure and the optical waveguide structure is provided between the lasing structure and the optical waveguide structure.
11 . A hybrid silicon laser comprising:
a bulk silicon substrate;
a localized insulating layer that extends on at least a portion of a surface of the bulk silicon substrate;
an optical waveguide structure on the bulk silicon substrate and the localized insulating layer; and
a lasing structure on the optical waveguide structure.
12 . The hybrid silicon laser of claim 11 , wherein the optical waveguide structure comprises:
a silicon layer on the bulk silicon substrate and the localized insulating layer;
an optical waveguide layer in the silicon layer; and
an optical waveguide defined by the optical waveguide layer.
13 . The hybrid silicon laser of claim 12 , wherein the optical wave guide layer is in a trench at opposite sides of the optical waveguide in the silicon layer and includes a material layer having a refractive index lower than a refractive index of the silicon layer.
14 . (canceled)
15 . The hybrid silicon laser of claim 11 , wherein the lasing structure comprises a light-emitting composite layer on the optical waveguide structure and a clad layer on the light-emitting composite layer.
16 . The hybrid silicon laser of claim 15 , wherein the light-emitting composite layer comprises:
a light-emitting layer configured to emit light;
a first separate confinement heterostructure layer between the optical waveguide structure and the light-emitting layer; and
a second separate confinement heterostructure layer on the light-emitting layer.
17 . The hybrid silicon laser of claim 15 , wherein an electric connection layer is on the optical waveguide structure and between the light-emitting composite layer and the optical waveguide structure.
18 . The hybrid silicon laser of claim 17 , wherein a buffer layer for crystal growth is provided between the optical waveguide structure and the electric connection layer.
19 .- 21 . (canceled)
22 . A hybrid silicon laser comprising:
a bulk silicon substrate;
a localized insulating layer that extends on at least a portion of the bulk silicon substrate;
an optical waveguide structure comprising:
a silicon layer on the bulk silicon substrate and the localized insulating layer;
an optical waveguide layer in the silicon layer; and
an optical waveguide defined by the optical waveguide layer; and
a lasing structure comprising:
a first electric connection layer on the optical waveguide structure;
a light-emitting composite layer on the first electric connection layer; and
a clad layer on the light-emitting composite layer.
23 . The hybrid silicon laser of claim 22 , wherein the optical waveguide layer comprises a gas layer in a trench in the silicon layer with respect to the optical waveguide.
24 .- 25 . (canceled)
26 . The hybrid silicon laser of claim 22 , wherein a second electric connection layer is provided on the clad layer.
27 . The hybrid silicon laser of claim 26 , wherein a first electric terminal and a second electric terminal are provided on each of the first electric connection layer and the second electric connection layer, respectively.
28 .- 33 . (canceled)