Making electrical components in handle wafers of integrated circuit packages
A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first region. The capacitor has a pair of electrodes, each coupled to one of a pair of conductive pads, at least one of which is disposed on a lower surface of the handle wafer. An interposer having an upper surface with a conductive pad and at least one semiconductor die disposed thereon is also provided. The die has an integrated circuit that is electroconductively coupled to a redistribution layer (RDL) of the interposer. The lower surface of the handle wafer is bonded to the upper surface of the interposer such that the die is disposed below or within the cavity and the electroconductive pad of the handle wafer is bonded to the electroconductive pad of the interposer in a metal-to-metal bond.
1. An integrated circuit package comprising a first substrate and a second substrate bonded to the first substrate, with a plurality of cavities enclosed by the first and second substrates, the plurality of cavities comprising one or more first cavities and one or more second cavities;
wherein the second substrate comprises circuitry with first electroconductive pads in the first and second cavities, each of the first and second cavities having at least one first electroconductive pad therein; and
wherein the integrated circuit package further comprises:
in each first cavity, at least one semiconductor die comprising an integrated circuit electroconductively coupled to at least one first electroconductive pad in the first cavity; and
in each second cavity, at least one discrete electrical component electroconductively coupled to at least one first electroconductive pad in the second cavity and comprising a conductive layer such that at least one of the following is true:
(i) the conductive layer is formed over a surface of the first substrate in the second cavity;
(ii) the conductive layer comprises at least a part of the surface of the first substrate in the second cavity.
2. The integrated circuit package of claim 1 wherein the first substrate is a semiconductor substrate, and in at least one second cavity the conductive layer is a doped layer comprising at least said part of the surface of the first substrate.
3. The integrated circuit package of claim 1 wherein in at least one second cavity the conductive layer is formed over the surface of the first substrate.
4. The integrated circuit package of claim 1 wherein in at least one second cavity, at least one discrete electrical component is a capacitor, and the conductive layer is a first plate of the capacitor.
5. The integrated circuit package of claim 4 wherein in said at least one second cavity, the surface of the first substrate in the cavity comprises one or more rods or ridges increasing a capacitance of the capacitor.
6. The integrated circuit package of claim 4 wherein in said at least one second cavity:
the capacitor comprises a second plate and a dielectric layer between the first and second plates; and
the surface of the first substrate in the cavity comprises one or more rods or ridges increasing an area of each of the first and second plates.
7. The integrated circuit package of claim 4 wherein in at least one second cavity:
the capacitor comprises a second plate and a dielectric layer between the first and second plates; and
the surface of the first substrate in the cavity comprises one or more rods or ridges increasing an area of each of the first and second plates.
8. The integrated circuit package of claim 1 wherein the circuitry of the second substrate further comprises a second electroconductive pad not covered by the first substrate and comprises a conductive line connecting the second electroconductive pad to at least one first electroconductive pad in a second cavity.
9. The integrated circuit package of claim 1 wherein the circuitry of the second substrate comprises an electroconductive via connected to at least one first electroconductive pad and passing through the second substrate.
10. The integrated circuit package of claim 1 wherein at least one second cavity does not contain any integrated circuit.
11. A fabrication method comprising:
obtaining a first substrate;
forming one or more features each of which comprises a conductive layer such that at least one of the following is true:
(i) the conductive layer is formed over a surface of the first substrate;
(ii) the conductive layer comprises a part of the surface of the first substrate;
providing a second substrate comprising circuitry comprising one or more first electroconductive pads;
obtaining one or more semiconductor dies each of which comprises an integrated circuit;
attaching together the first substrate, the second substrate, and the one or more semiconductor dies to obtain a structure with a plurality of cavities enclosed by the first and second substrates, the plurality of cavities comprising one or more first cavities and one or more second cavities, each of the first and second cavities having at least one first electroconductive pad therein, such that each first cavity contains at least one said semiconductor die comprising the integrated circuit electroconductively coupled to at least one first electroconductive pad in the first cavity, and each second cavity contains at least one discrete electrical component comprising at least one said feature and electroconductively coupled to at least one first electroconductive pad in the second cavity.
12. An integrated circuit package comprising a first substrate and a second substrate bonded to the first substrate, with one or more cavities enclosed by the first and second substrates;
wherein the second substrate comprises circuitry with one or more first electroconductive pads in the one or more cavities, each of the one or more cavities having at least one first electroconductive pad therein; and
wherein the integrated circuit package further comprises:
in each said cavity, at least one semiconductor die comprising an integrated circuit electroconductively coupled to at least one first electroconductive pad in the first cavity;
in each substrate of the first and second substrates, at least one trough hole passing through the substrate, each said through hole being spaced from each said cavity;
in each said through hole, a capacitor structure comprising:
a first electroconductive layer comprising at least one of: (i) a layer formed over a surface of the through hole; (ii) a doped layer on a surface of the through hole;
a dielectric layer formed over a surface of the first electroconductive layer; and
a second electroconductive layer over the dielectric layer;
wherein the first electroconductive layer of the capacitor structure in each said through hole in the first substrate is bonded to the second electroconductive layer of the capacitor structure in a corresponding through hole in the second substrate.
13. The integrated circuit package of claim 12 wherein in at least one said through hole, the first electroconductive layer comprises the layer formed over the surface of the through hole.
14. The integrated circuit package of claim 12 wherein in at least one said through hole, the first electroconductive layer comprises the doped layer on the surface of the through hole.
15. The integrated circuit package of claim 12 wherein in at least one said through hole in the second substrate, the second electrode fills a hollow space inside the dielectric layer.
16. The integrated circuit package of claim 12 wherein in at least one said through hole in the first substrate, the second electrode fills a hollow space inside the dielectric layer.
17. The integrated circuit package of claim 12 wherein in at least one said through hole in the second substrate, the first electroconductive layer is electroconductively coupled to an electroconductive pad disposed on a bottom of the second substrate.
18. The integrated circuit package of claim 12 wherein each said through hole comprises a through silicon via.