Manufacturing apparatus of semiconductor device and management method of manufacturing apparatus of semiconductor device
According to one embodiment, a management method of a manufacturing apparatus of a semiconductor device, the method includes measuring a weight of a pre-exposure substrate including a semiconductor substrate and a resist film provided on the semiconductor substrate, performing an exposure process for the resist film, measuring a weight of a post-exposure substrate including the semiconductor substrate and the resist film after the exposure process is performed, and acquiring a weight difference between the weight of the pre-exposure substrate and the weight of the post-exposure substrate.
1. A management method of a manufacturing apparatus of a semiconductor device, the method comprising:
measuring a weight of a pre-exposure substrate including a semiconductor substrate and a resist film provided on the semiconductor substrate;
performing an exposure process for the resist film;
measuring a weight of a post-exposure substrate including the semiconductor substrate and the resist film after the exposure process is performed;
acquiring a weight difference between the weight of the pre-exposure substrate and the weight of the post-exposure substrate; and
acquiring a film thickness of a contamination film produced by the exposure process based on the weight difference.
2. The method of claim 1 , further comprising adding the film thickness of the contamination film to a total value of contamination film thicknesses already acquired.
3. The method of claim 2 , further comprising comparing an updated total value of contamination film thicknesses to a reference film thickness, the updated total value of contamination film thicknesses being acquired by adding the film thickness of the contamination film to the total value of contamination film thicknesses already acquired.
4. The method of claim 3 , further comprising determining that an optical system of an exposure apparatus which performs the exposure process is to be cleaned if the updated total value of contamination film thicknesses is greater than the reference film thickness.
5. The method of claim 1 , wherein the film thickness of the contamination film produced by the exposure process is acquired based on a relationship between a film thickness of a contamination film and a weight difference between a weight of a pre-exposure substrate and a weight of a post-exposure substrate, the relationship being acquired in advance.
6. The method of claim 5 , wherein the relationship is acquired in advance for each kind of resist to be used.
7. The method of claim 1 , wherein the weight of the pre-exposure substrate and the weight of the post-exposure substrate are measured by a weight measurement unit incorporated in an exposure apparatus which performs the exposure process.
8. The method of claim 1 , wherein the exposure process is performed using a EUV light source.