Semiconductor device and a method of manufacturing the same
A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10 . In other words, the wires are arranged in space which becomes available because the pad is small enough.
1. A semiconductor device comprising:
(a) a semiconductor substrate of substantially rectangular shape having a pair of long edges and a pair of short edges;
(b) a semiconductor element formed over the semiconductor substrate;
(c) a first insulating film formed over the semiconductor substrate to cover the semiconductor element;
(d) a plurality of pad electrodes formed over the first insulating film and formed of a conductive layer,
(e) a first wiring and a second wiring which are formed over the first insulating film and are formed at a same level conductive layer as that of the conductive layer of the pad electrodes;
(f) a second insulating film formed over the pad electrodes, the first wiring, and the second wiring, the second insulating film having openings at respective upper sides of the pad electrodes; and
(g) a plurality of bump electrodes of substantially rectangular shape formed over the second insulating film and being electrically connected to the pad electrodes via the respective openings of the second insulating film,
wherein the bump electrodes are arranged at a first interval in a first direction which is along one of the long edges of the semiconductor substrate,
wherein the pad electrodes are arranged at a second interval in the first direction,
wherein the bump electrodes have a pair of short edges and a pair of long edges respectively, the pair of long edges extending in a second direction which is along one of the pair of short edges of the semiconductor substrate,
wherein both of the first wiring and the second wiring are disposed to intersect with the pair of long edges of the bump electrodes in a plan view and disposed under the bump electrodes,
wherein a width of the first wiring in the second direction is larger than a width of the second wiring in the second direction, and
wherein the first wiring is disposed at a position where is further from the pad electrodes in the second direction in a plan view in comparison with the second wiring.
2. The semiconductor device according to claim 1 , wherein the first wiring layer is a power supply wire.
3. The semiconductor device according to claim 2 , wherein the first wiring layer is a dummy wire.
4. The semiconductor device according to claim 1 ,
wherein a width of the bump electrodes in the first direction are smaller than a width of the pad electrodes in the first direction respectively, and
wherein a width of bump electrodes in the second direction is larger than a width of the pad electrodes in the second direction respectively.
5. The semiconductor device according to claim 1 ,
wherein one of the pair of the short edges of the bump electrodes is positioned between both long sides of the first wiring in the second direction in a plan view respectively.
6. The semiconductor device according to claim 5 ,
wherein the other of the pair of the short edges of the bump electrodes is positioned inside a peripheral edge of the respective pad electrodes in a plan view.
7. The semiconductor device according to claim 1 , wherein the bump electrodes are formed of a gold film.
8. The semiconductor device according to claim 1 , wherein both of the first wiring and the second wiring are formed in a top wiring layer.
9. The semiconductor device according to claim 1 , wherein the semiconductor element is included in circuits which drive a liquid crystal display.
10. The semiconductor device according to claim 1 ,
wherein a width of the pad electrodes in the first direction is smaller than a width of each of the pad electrodes in the second direction respectively.
11. A semiconductor device comprising:
(a) a semiconductor substrate of substantially rectangular shape having a pair of long edges and a pair of short edges;
(b) a semiconductor element formed over the semiconductor substrate;
(c) a first insulating film formed over the semiconductor substrate to cover the semiconductor element;
(d) a plurality of pad electrodes formed over the first insulating film and formed of a conductive layer;
(e) a first wiring and a second wiring which are formed over the first insulating film and are formed at a same level conductive layer as that of the conductive layer of the pad electrodes;
(f) a second insulating film formed over the pad electrodes, the first wiring, and the second wiring, the second insulating film having openings at respective upper sides of the pad electrodes; and
(g) a plurality of bump electrodes of substantially rectangular shape formed over the second insulating film and being electrically connected to the pad electrodes via the respective openings of the second insulating film,
wherein the bump electrodes are arranged at a first interval in a first direction which is along one of the long edges of the semiconductor substrate,
wherein the pad electrodes are arranged at a second interval in the first direction,
wherein the bump electrodes have a pair of short edges and a pair of long edges respectively, the pair of long edges extending in a second direction which is along one of the pair of short edges of the semiconductor substrate,
wherein both of the first wiring and the second wiring are disposed to intersect with the pair of long edges of the bump electrodes in a plan view and disposed under the bump electrodes,
wherein a width of the first wiring in the second direction is larger than a width of the second wiring in the second direction, and
wherein the second wiring is disposed at a position between the respective pad electrodes and the first wiring in the second direction in a plan view.
12. The semiconductor device according to claim 11 , wherein the first wiring layer is a power supply wire.
13. The semiconductor device according to claim 12 , wherein the first wiring layer is a dummy wire.
14. The semiconductor device according to claim 11 ,
wherein a width of the bump electrodes in the first direction are smaller than a width of the pad electrodes in the first direction respectively, and
wherein a width of bump electrodes in the second direction is larger than a width of the pad electrodes in the second direction respectively.
15. The semiconductor device according to claim 11 ,
wherein one of the pair of the short edges of the bump electrodes is positioned between both long sides of the first wiring in the second direction in a plan view respectively.
16. The semiconductor device according to claim 15 ,
wherein the other of the pair of the short edges of the bump electrodes is positioned inside a peripheral edge of the respective pad electrodes in a plan view.
17. The semiconductor device according to claim 11 , wherein the bump electrodes are formed of a gold film.
18. The semiconductor device according to claim 11 , wherein both of the first wiring and the second wiring are formed in a top wiring layer.
19. The semiconductor device according to claim 11 , wherein the semiconductor element is included in circuits which drive a liquid crystal display.
20. The semiconductor device according to claim 11 ,
wherein a width of the pad electrodes in the first direction is smaller than a width of each of the pad electrodes in the second direction respectively.