Visible light laser voltage probing on thinned substrates

1. A system comprising:

a laser configured to emit visible light having a wavelength, wherein the visible light is transmitted to be incident upon an integrated circuit, and is reflected from a feature in the integrated circuit, wherein the feature is located beneath a layer of semiconductor material having a thickness to enable passage of the visible light through the semiconductor material during transmission of the visible light to the feature and reflection of the visible light from the feature, and further wherein the thickness of the layer of the semiconductor material is selected as a function of the wavelength of the visible light;

a detector configured to generate a test signal based upon the visible light reflected from the integrated circuit feature;

a processing unit; and

memory that stores instructions that, when executed by the processing unit, cause the processing unit to perform acts comprising:

receiving the test signal from the detector;

comparing the test signal with a base signal, wherein the base signal is obtained from a test integrated circuit having a known condition;

determining, based upon comparing the test signal with the base signal, a state of the integrated circuit, wherein the state identifies one or more differences between the test signal and the base signal; and

generating an output that is indicative of the state of the integrated circuit feature.

2. The system of claim 1 , wherein the semiconductor material has been thinned from an original thickness to the thickness to enable passage of the visible light through the semiconductor material during transmission of the visible light to the feature and reflection of the visible light from the feature.

3. The system of claim 2 , wherein the semiconductor material has been thinned by at least one of reactive ion-etching processing, focused ion beam, pulse laser-assisted chemical etching, or xenon difluoride etching.

4. The system of claim 2 , wherein the semiconductor material has been thinned to expose a buried oxide layer located between the laser and the feature.

5. The system of claim 2 , wherein removal of the semiconductor material does not interfere with operation of the integrated circuit.

6. The system of claim 2 , wherein the semiconductor material has been thinned to a thickness of about 2-4 microns, of about 3-4 microns, of about 2 microns, of about 0.25 microns, of about 60-70 nanometers, or a distance of 2-4 times a wavelength of the incident visible light, between an exposed surface of the semiconductor material and a surface of the feature.

7. The system of claim 2 , wherein the semiconductor material has been thinned to enable passage of the visible light through the semiconductor during transmission of the visible light to the feature and reflection of the visible light from the feature.

8. The system of claim 1 , wherein the feature is at least one of a transistor, a diode, a PN junction, or a semiconductor device.

9. The system of claim 1 , wherein the visible light has a wavelength of about 650 nanometers (nm), of about 510 nm, of about 475 nm, a value in a range of about 400-700 nm, a value in a range of about 620-750 nm, a value in a range of about 495-570 nm, a value in a range of about 450-495 nm, or a value in a range of about 633-640 nm.

10. The system of claim 1 , further comprising a signal source that is configured to energize the feature with an electrical signal, wherein during incidence of the visible light on the integrated circuit feature the electrical signal at the integrated circuit feature interacts with the incident visible light such that the incident visible light has at least one characteristic different to the reflected visible light.

11. A method comprising:

illuminating an integrated circuit (IC) with visible light having a wavelength, wherein the visible light is incident upon a feature in the IC and is reflected from the feature, wherein the feature is located beneath a layer of semiconductor material having a thickness enabling passage of the visible light through the semiconductor material during transmission of the visible light to the feature and reflection of the visible light from the feature, wherein the thickness of the semiconductor material is selected based upon the wavelength of the visible light, and further wherein the visible light is generated by a laser;

applying an electrical signal to the feature, wherein the electrical signal modifies the visible light incident upon the feature;

capturing the visible light reflected from the feature, wherein the reflected visible light is captured by a detector;

generating a test signal based upon the visible light reflected from the feature, wherein the test signal is generated by the detector;

comparing the test signal with a base signal, wherein the base signal is obtained from a test integrated circuit having a known condition, wherein the comparing is performed by a processing unit that is in communication with the detector;

determining, based upon the comparing of the test signal with the base signal, a state of the feature, wherein the determining is performed by the processing unit; and

generating an output indicative of the state of the feature, wherein the output is generated by the processing unit.

12. The method of claim 11 , further comprising thinning the semiconductor material from an original thickness to the thickness enabling passage of the visible light through the semiconductor material during transmission of the visible light to the feature and reflection of the visible light from the feature.

13. The method of claim 12 , wherein the semiconductor material has been thinned by at least one of reactive ion-etching processing, focused ion beam, pulse laser-assisted etching, or xenon difluoride etching.

14. The method of claim 11 , wherein the semiconductor material has been thinned to a thickness of about 2-4 microns, of about 3-4 microns, of about 2 microns, of about 0.25 microns, of about 60-70 nanometers, of about 5 nanometers, or a distance of 2-4 times a wavelength of the incident visible light, between an exposed surface of the semiconductor material and a surface of the feature.

15. The method of claim 11 , wherein the feature is at least one of a transistor, a diode, a PN junction, or a semiconductor device.

16. The method of claim 11 , wherein the visible light has a wavelength of about 650 nanometers (nm), of about 510 nm, of about 475 nm, a value in a range of about 400-700 nm, a value in a range of about 620-750 nm, a value in a range of about 495-570 nm, a value in a range of about 450-495 nm, or a value in a range of about 633-640 nm.

17. A system comprising:

a laser configured to emit visible light having a wavelength, wherein the visible light is transmitted to be incident upon an integrated circuit, and is reflected from a feature in the integrated circuit, wherein the feature is located beneath a layer of buried oxide material having a thickness to enable passage of the visible light through the buried oxide material during transmission of the visible light to the feature and reflection of the visible light from the feature, and further wherein the thickness of the buried oxide material is selected based upon the wavelength of the visible light;

a detector configured to generate a test signal based upon the visible light reflected from the feature;

a processing unit; and

memory that stores instructions that, when executed by the processing unit, cause the processing unit to perform acts comprising:

comparing the test signal with a base signal, wherein the base signal is obtained from a test integrated circuit having a known condition;

determining, based upon comparing the test signal with the base signal, a state of the feature; and

generating an output that is indicative of the state of the feature.

18. The system of claim 17 , wherein the buried oxide material has been thinned to a thickness of about 2-4 microns, of about 3-4 microns, of about 2 microns, of about 0.25 microns, of about 60-70 nanometers, or a distance of 2-4 times a wavelength of the incident visible light, between an exposed surface of the semiconductor material and the transistor surface.

19. The system of claim 17 , wherein the visible light has a wavelength of about 650 nanometers (nm), of about 510 nm, of about 475 nm, a value in a range of about 400-700 nm, a value in a range of about 620-750 nm, a value in a range of about 495-570 nm, a value in a range of about 450-495 nm, or a value in a range of about 633-640 nm.

20. The system of claim 17 , wherein the feature is at least one of a transistor, a diode, a PN junction, or a semiconductor device.