IP Library Granted Patent US 9,659,894
Granted Patent B2
US 9,659,894 · App. 14/837,426 · Granted May 23, 2017

Chip mounting

Inventor: Simon Jonathan Stacey (Suffolk, GB)
Assignee: QUALCOMM TECHNOLOGIES INTERNATIONAL, LTD.
H01L24/17H01L23/3114H01L23/3192H01L24/05H01L24/13H01L23/28H01L23/29H01L23/532H01L24/10H01L2224/024H01L2224/0401H01L2224/05572H01L2224/12105H01L2224/13H01L2224/13111H01L2224/1412H01L2224/16H01L2224/16225H01L2924/0002H01L2924/00014H01L2924/014H01L2924/0105H01L2924/01005H01L2924/01006H01L2924/01013H01L2924/01014H01L2924/01015H01L2924/01022H01L2924/01029H01L2924/01047H01L2924/10253H01L2924/14H01L2924/2064H01L2924/20641H01L2924/20642H01L2924/20643H01L2924/20644H01L2924/20645
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,659,894
App. No.
14/837,426
Granted
May 23, 2017
Kind
B2
Abstract

A device comprising a chip including a substrate defining one or more electronic devices and a printed circuit board electrically connected to the chip via one or more solder elements sandwiched between the chip and the printed circuit board, and the solder elements, and buffer layers having a Young's Modulus of 2.5 GPa or less.

Claims (39)

1. A chip comprising

a substrate;

one or more electronic devices;

one or more solder elements electrically connected to the one or more electronic devices,

a first buffer layer and a second buffer layer located between the substrate and the one or more solder elements, wherein the first and second buffer layers are impact resisting buffer layers; and

a patterned conductive layer between the first and second buffer layers, the patterned conductive layer configured to electrically connect the one or more solder elements to the one or more electronic devices,

wherein each of the first and second buffer layers has a Young's Modulus in the range of 1.6 GPa to 2.4 GPa,

wherein each of the first and second buffer layers has a thickness in the range of about 6.5 microns to about 10 microns.

2. A chip according to claim 1 , wherein each of the first and second buffer layers has a thickness of about 7.5 microns.

3. A chip according to claim 1 , wherein the first and second buffer layers have the same composition.

4. A chip according to claim 1 , wherein each of the first and second buffer layers has a Young's Modulus of about 2 GPa.

5. A chip according to claim 1 , comprising

an array of the one or more solder elements spaced at a pitch of 0.5 mm or less.

6. A chip according to claim 1 , comprising

an array of the one or more solder elements spaced at a pitch of 0.4 mm or less.

7. A chip according to claim 1 , wherein the one or more solder elements are tin-based solder elements having a composition including about 4% wt. silver, and about 0.5% wt. copper.

8. A chip according to claim 1 , wherein the one or more solder elements are solder balls.

9. A chip according to claim 1 , wherein the one or more solder elements are solder bumps.

10. A chip according to claim 1 , wherein the substrate is a semiconductor wafer.

11. A device comprising:

a chip comprising:

a substrate;

one or more electronic devices;

one or more solder elements electrically connected to the one or more electronic devices,

a first buffer layer and a second buffer layer located between the substrate and the one or more solder elements, wherein the first and second buffer layers are impact resisting buffer layers; and

a patterned conductive layer between the first and second buffer layers, the patterned conductive layer configured to electrically connect the one or more solder elements to the one or more electronic devices,

wherein the first and second buffer layers has a Young's Modulus in the range of 1.6 GPa to 2.4 GPa,

wherein each of the first and second buffer layers has a thickness in the range of about 6.5 microns to about 10 microns; and

a printed circuit board electrically connected to the chip via said one or more solder elements.

12. A wireless communication device including the chip according to claim 1 .

13. A wireless communication device including the device according to claim 11 .

14. A method comprising:

defining a location within areas of a chip for one or more electronic devices and one or more solder elements;

electrically connecting the one or more solder elements to the one or more electronic devices; and

providing the chip with two impact resisting buffer layers between a substrate and the one or more solder elements and a patterned conductive layer sandwiched between the buffer layers for electrically connecting the one or more solder elements to the one or more electronic devices,

wherein each of the two buffer layers has a Young's Modulus in the range of 1.6 GPa to 2.4 GPa, and

wherein each of the two buffer layers has a thickness in the range of about 6.5 microns to about 10 microns.

15. The method as claimed in claim 14 , further comprising

electrically connecting a printed circuit board to the chip via the one or more solder elements.

Assignments (2)
CHANGE OF NAME Recorded Apr 15, 2016
From: CAMBRIDGE SILICON RADIO LIMITED
To: QUALCOMM TECHNOLOGIES INTERNATIONAL, LTD.
Reel/Frame 038291/0277 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2016
From: STACEY, SIMON JONATHAN
To: CAMBRIDGE SILICON RADIO LIMITED
Reel/Frame 038252/0739 →
Priority Claims (1)
GB 0624888.4 · Dec 13, 2006 · national
Continuity (2)
Continuation 12518262
Related Publication 20160086907A1 · Mar 24, 2016