IP Library Granted Patent US 9,576,995
Granted Patent B2
US 9,576,995 · App. 14/837,791 · Granted Feb 21, 2017

Imaging device and electronic device

Inventors: Hiroki Inoue (Kanagawa, JP); Yoshiyuki Kurokawa (Kanagawa, JP); Takayuki Ikeda (Kanagawa, JP); Yuki Okamoto (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/14612H01L27/14614H01L27/14689H01L27/14692H01L29/24H01L29/7869
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Quick Facts
Patent No.
US 9,576,995
App. No.
14/837,791
Granted
Feb 21, 2017
Kind
B2
Abstract

An imaging device capable of obtaining high-quality imaging data is provided. The imaging device includes a first circuit, a second circuit and a third circuit. The first circuit includes a photoelectric conversion element, a plurality of transistors including an amplifier transistor, and a plurality of capacitors. The second circuit includes a transistor. The third circuit includes a resistor and a transistor for controlling a current flowing in the resistor. The output signal of the imaging device is determined in accordance with the current flowing in the resistor. Variations in electrical characteristics of the amplifier transistor included in the first circuit can be compensated.

Claims (93)

1. An imaging device comprising:

a first circuit comprising;

a photoelectric conversion element comprising a first terminal and a second terminal;

a first transistor comprising a source and a drain;

a second transistor comprising a source and a drain;

a third transistor comprising a source and a drain;

a fourth transistor comprising a source and a drain;

a fifth transistor comprising a source and a drain;

a first capacitor comprising a first terminal and a second terminal; and

a second capacitor comprising a first terminal and a second terminal;

a second circuit comprising a sixth transistor comprising a source and a drain; and

a third circuit comprising a seventh transistor comprising a source and a drain and a resistor comprising a first terminal and a second terminal,

wherein the first terminal of the photoelectric conversion element is electrically connected to one of the source and the drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to the first terminal of the first capacitor,

wherein one of the source and the drain of the second transistor is electrically connected to the second terminal of the first capacitor,

wherein the second terminal of the first capacitor is electrically connected to the first terminal of the second capacitor,

wherein one of the source and the drain of the third transistor is electrically connected to the second terminal of the second capacitor,

wherein the other of the source and the drain of the third transistor is electrically connected to one of the source and the drain of the fourth transistor,

wherein a gate of the fourth transistor is electrically connected to the one of the source and the drain of the third transistor,

wherein one of the source and the drain of the fifth transistor is electrically connected to the other of the source and the drain of the fourth transistor,

wherein the other of the source and the drain of the fifth transistor is electrically connected to one of the source and the drain of the sixth transistor,

wherein one of the source and the drain of the seventh transistor is electrically connected to the other of the source and the drain of the fifth transistor, and

wherein the other of the source and the drain of the seventh transistor is electrically connected to the first terminal of the resistor.

2. The imaging device according to claim 1 ,

wherein the first circuit comprises a third capacitor comprising a first terminal and a second terminal,

wherein the first terminal of the third capacitor is electrically connected to the second terminal of the second capacitor, and

wherein the second terminal of the third capacitor is electrically connected to the other of the source and the drain of the fourth transistor.

3. The imaging device according to claim 1 ,

wherein the second circuit comprises an eighth transistor comprising a source and a drain,

wherein one of the source and the drain of the eighth transistor is electrically connected to the other of the source and the drain of the sixth transistor,

wherein a gate of the eighth transistor is electrically connected to a gate of the sixth transistor, and

wherein the gate of the eighth transistor is electrically connected to the other of the source and the drain of the eighth transistor.

4. The imaging device according to claim 1 ,

wherein the other of the source and the drain of the second transistor is electrically connected to the second terminal of the photoelectric conversion element.

5. The imaging device according to claim 1 ,

wherein the first circuit comprises a fourth capacitor comprising a first terminal and a second terminal,

wherein the first terminal of the fourth capacitor is electrically connected to one of the source and the drain of the second transistor, and

wherein the second terminal of the fourth capacitor is electrically connected to the other of the source and the drain of the third transistor.

6. The imaging device according to claim 1 ,

wherein the first circuit comprises a ninth transistor comprising a source and a drain, and

wherein one of the source and the drain of the ninth transistor is electrically connected to the one of the source and the drain of the first transistor.

7. The imaging device according to claim 1 ,

wherein each of the first to seventh transistors includes an oxide semiconductor in an active layer, and

wherein the oxide semiconductor includes In, Zn, and M where M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

8. An electronic device comprising:

the imaging device according to claim 1 ; and

one selected from the group consisting of a display device, an operation key, and a shutter button.

9. An imaging device comprising:

a first circuit comprising;

a photoelectric conversion element comprising a first terminal and a second terminal;

a first transistor comprising a source and a drain;

a second transistor comprising a source and a drain;

a third transistor comprising a source and a drain;

a fourth transistor comprising a source and a drain;

a fifth transistor comprising a source and a drain;

a first capacitor comprising a first terminal and a second terminal; and

a second capacitor comprising a first terminal and a second terminal;

a second circuit comprising a sixth transistor comprising a source and a drain; and

a third circuit comprising a seventh transistor comprising a source and a drain and a resistor comprising a first terminal and a second terminal,

wherein the first terminal of the photoelectric conversion element is electrically connected to one of the source and the drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to the first terminal of the first capacitor,

wherein one of the source and the drain of the second transistor is electrically connected to the second terminal of the first capacitor,

wherein the second terminal of the first capacitor is electrically connected to the first terminal of the second capacitor,

wherein one of the source and the drain of the third transistor is electrically connected to the second terminal of the second capacitor,

wherein the other of the source and the drain of the third transistor is electrically connected to one of the source and the drain of the fourth transistor,

wherein a gate of the fourth transistor is electrically connected to the one of the source and the drain of the third transistor,

wherein one of the source and the drain of the fifth transistor is electrically connected to the other of the source and the drain of the fourth transistor,

wherein the other of the source and the drain of the fifth transistor is electrically connected to one of the source and the drain of the sixth transistor, and

wherein a current flowing in the resistor is configured to be controlled by the seventh transistor.

10. The imaging device according to claim 9 ,

wherein the first circuit comprises a third capacitor comprising a first terminal and a second terminal,

wherein the first terminal of the third capacitor is electrically connected to the second terminal of the second capacitor, and

wherein the second terminal of the third capacitor is electrically connected to the other of the source and the drain of the fourth transistor.

11. The imaging device according to claim 9 ,

wherein the second circuit comprises an eighth transistor comprising a source and a drain,

wherein one of the source and the drain of the eighth transistor is electrically connected to the other of the source and the drain of the sixth transistor,

wherein a gate of the eighth transistor is electrically connected to a gate of the sixth transistor, and

wherein the gate of the eighth transistor is electrically connected to the other of the source and the drain of the eighth transistor.

12. The imaging device according to claim 9 ,

wherein the other of the source and the drain of the second transistor is electrically connected to the second terminal of the photoelectric conversion element.

13. The imaging device according to claim 9 ,

wherein the first circuit comprises a fourth capacitor comprising a first terminal and a second terminal,

wherein the first terminal of the fourth capacitor is electrically connected to one of the source and the drain of the second transistor, and

wherein the second terminal of the fourth capacitor is electrically connected to the other of the source and the drain of the third transistor.

14. The imaging device according to claim 9 ,

wherein the first circuit comprises a ninth transistor comprising a source and a drain, and

wherein one of the source and the drain of the ninth transistor is electrically connected to the one of the source and the drain of the first transistor.

15. The imaging device according to claim 9 ,

wherein each of the first to seventh transistors includes an oxide semiconductor in an active layer, and

wherein the oxide semiconductor includes In, Zn, and M where M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

16. An electronic device comprising:

the imaging device according to claim 9 ; and

one selected from the group consisting of a display device, an operation key, and a shutter button.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 2, 2015
From: INOUE, HIROKI; KUROKAWA, YOSHIYUKI; IKEDA, TAKAYUKI; OKAMOTO, YUKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 036475/0250 →
Priority Claims (1)
JP 2014-178212 · Sep 2, 2014 · national
Continuity (1)
Related Publication 20160064444A1 · Mar 3, 2016