Integrated circuit structures comprising conductive vias and methods of forming conductive vias
A method of forming conductive vias comprises forming a first via opening and a second via opening within a substrate. First conductive material of a first conductivity is formed into the first and second via openings. The first conductive material lines sidewalls and a base of the second via opening to less-than-fill the second via opening. Second conductive material is formed into the second via opening over the first conductive material in the second via opening. The second conductive material is of a second conductivity that is greater than the first conductivity. All conductive material within the first via opening forms a first conductive via defining a first maximum conductance elevationally through the first conductive via and all conductive material within the second via opening forms a second conductive via defining a second maximum conductance elevationally through the second conductive via that is greater than said first maximum conductance. Integrated circuit structure comprising conductive vias independent of method of manufacture are disclosed.
1. A method of forming conductive vias, comprising:
forming a first via opening and a second via opening within a substrate;
forming first conductive material of a first conductivity into the first and second via openings, the first conductive material lining sidewalls and a base of the second via opening to less-than-fill the second via opening, the forming of the first conductive material forming the first conductive material to line sidewalls and a base of the first via opening to less-than-fill the first via opening with the first conductive material;
forming second conductive material into the second via opening over the first conductive material in the second via opening, the second conductive material being of a second conductivity that is greater than the first conductivity; and
all conductive material within the first via opening forming a first conductive via defining a first maximum conductance elevationally through the first conductive via and all conductive material within the second via opening forming a second conductive via defining a second maximum conductance elevationally through the second conductive via that is greater than said first maximum conductance.
2. The method of claim 1 wherein the first conductivity is no less than about 1,000 siemens/cm and no greater than about 50,000 siemens/cm.
3. The method of claim 1 wherein the second conductivity is at least 50,000 siemens/cm greater than the first conductivity.
4. The method of claim 1 comprising forming the first conductive via to have the first maximum conductance be no greater than about 200 microsiemens, the first maximum conductance be no less than about 100 microsiemens, and forming the second conductive via to have the second maximum conductance be at least about 10,000 microsiemens.
5. The method of claim 1 comprising forming the first via opening to have a smaller minimum open horizontal width than the second via opening.
6. The method of claim 1 wherein the forming of the first conductive material overfills the first via opening with first conductive material.
7. The method of claim 1 wherein no second conductive material is ever formed into the first via opening.
8. The method of claim 1 comprising forming fill material into the first and second via openings over the first conductive material, the fill material overfilling volume of the first via opening remaining after the forming of the first conductive material, the fill material lining sidewalls and a base of the first conductive material in the second via opening to less-than-fill volume of the second via opening remaining after the forming of the first conductive material.
9. The method of claim 8 comprising forming the first conductive via to comprise a cylinder of first conductive material encircling the fill material.
10. The method of claim 8 comprising forming the fill material to be insulative.
11. The method of claim 8 comprising forming the fill material to be semiconductive.
12. The method of claim 8 comprising forming the fill material to be conductive.
13. The method of claim 8 comprising forming the fill material to be of lower conductivity than the second conductivity.
14. The method of claim 1 wherein the first and second conductive vias are formed to individually have a planar elevationally outermost surface and which together are coplanar.