Semiconductor device and manufacturing method thereof

1. A semiconductor device, comprising:

a substrate having a first surface and a second surface opposite to the first surface;

a semiconductor die disposed over the first surface of the substrate and having a first surface and a second surface opposite to the first surface;

a dielectric material surrounding the semiconductor die to form an integrated semiconductor package;

a conductive structure disposed over the first surface of the semiconductor die;

a contact disposed in the substrate, coupling to the integrated semiconductor package and configured as a ground terminal for the semiconductor package; and

an EMI (Electric Magnetic Interference) shield enclosing the integrated semiconductor package, wherein the EMI shield is coupled with the contact through a path disposed in the integrated semiconductor package,

wherein the contact has a first surface facing the conductive structure and a second surface opposite to the first surface, the first and second surfaces of the contact are separated from the semiconductor die and the EMI shield, the first surface of the semiconductor die faces the conductive structure, the second surface of the semiconductor die faces the substrate and the contact, and the second surface of the contact is exposed through the second surface of the substrate.

2. The semiconductor device of claim 1 , wherein the path includes a conductive trace connected to the EMI shield at one end, and the conductive trace is a portion of a seal ring of the integrated semiconductor package.

3. The semiconductor device of claim 1 , wherein the conductive structure comprises:

an active portion electrically coupled to the semiconductor die; and

a dummy portion isolated from the semiconductor die, wherein the dummy portion is a portion of the path.

4. The semiconductor device of claim 1 , further comprising a plurality of conductive through isolation vias (TIV) in the dielectric material, and each of the plurality of conductive TIV including one end coupled to the contact.

5. The semiconductor device of claim 1 , further comprising a plurality of conductive through isolation vias (TIV) in the dielectric material, wherein the plurality of conductive TIV includes at least two different heights, and the plurality of conductive TIV are electrically connected to the conductive structure.

6. The semiconductor device of claim 1 , wherein a portion of the EMI shield is covering and conformal to a morphology of at least a portion of an outer surface of the integrated semiconductor package.

7. The semiconductor device of claim 1 , further comprising an electronic component over and electrically coupled to the semiconductor die through the conductive structure.

8. The semiconductor device of claim 1 , wherein an outer surface of the semiconductor device is a tapered surface.

9. A semiconductor device, comprising:

a substrate having a first surface and a second surface opposite to the first surface;

a semiconductor die disposed over the first surface of the substrate and having a first surface and a second surface opposite to the first surface;

a first molding surrounding a sidewall of the semiconductor die;

a dielectric layer over the first molding and the first surface of the semiconductor die;

a conductive structure in the dielectric layer, wherein the conductive structure includes a conductive trace electrically coupled to the semiconductor die;

a second molding over the dielectric layer, wherein the first molding, the dielectric layer, and the second molding are molded to form an integrated semiconductor package; and

an EMI (Electric Magnetic Interference) shield covering a portion of an outer surface of the integrated semiconductor package, wherein the EMI shield is electrically coupled to a ground terminal of the integrated semiconductor package,

wherein the ground terminal is disposed in the substrate, the ground terminal has a first surface facing the conductive structure and a second surface opposite to the first surface, the first and second surfaces of the ground terminal are separated from the EMI shield and the semiconductor die, the first surface of the semiconductor die faces the conductive structure, the second surface of the semiconductor die faces the substrate and the ground terminal, and the second surface of the ground terminal is exposed through the second surface of the substrate.

10. The semiconductor device of claim 9 , wherein an outer surface of the second molding is in a dome shape and the outer surface of the second molding is covered by the conductive layer.

11. The semiconductor device of claim 9 , wherein the conductive structure further includes a dummy portion electrically isolated from the semiconductor die and the dummy portion is in a peripheral of the integrated semiconductor package.

12. The semiconductor device of claim 9 , further comprising a conductive through isolation via (TIV) coupled to the ground terminal and extending through the dielectric layer.

13. The semiconductor device of claim 12 , wherein the conductive trace is connected to the EMI shield at one end and connected to the conductive TIV at the other end.

14. A semiconductor device, comprising:

a substrate having a first surface and a second surface opposite to the first surface;

a semiconductor die disposed over the first surface of the substrate and having a first surface and a second surface opposite to the first surface;

a molding laterally surrounding the semiconductor die;

a dielectric layer disposed over the molding and the first surface of the semiconductor die;

a conductive structure disposed in the dielectric layer and electrically coupled to the semiconductor die; and

an EMI (Electric Magnetic Interference) shield covering a portion of an outer surface of the integrated semiconductor package, wherein the EMI shield is electrically coupled to a ground terminal of the integrated semiconductor package through the conductive structure,

wherein the ground terminal is disposed in the substrate, the ground terminal has a first surface facing the conductive structure and a second surface opposite to the first surface, the first and second surfaces of the ground terminal are separated from the EMI shield and the semiconductor die, the first surface of the semiconductor die faces the conductive structure, the second surface of the semiconductor die faces the substrate and the ground terminal, and the second surface of the ground terminal is exposed through the second surface of the substrate.

15. The semiconductor device of claim 14 , wherein the outer surface is in a stepped configuration.

16. The semiconductor device of claim 14 , wherein the conductive structure is configured as a seal ring and disposed between the semiconductor die and the EMI shield.

17. The semiconductor device of claim 14 , further comprising a conductive retainer disposed in the dielectric layer and coupled to the EMI shield, wherein the conductive retainer is proximal to the periphery of the integrated semiconductor package.

18. The semiconductor device of claim 14 , wherein the conductive structure at least comprises two levels, wherein a first conductive trace of the conductive trace is disposed in a first level and a second conductive trace of the conductive trace is disposed in a second level over the first level and electrically coupled to the first conductive trace.

19. The semiconductor device of claim 18 , further comprising a first conductive through isolation via (TIV) and a second TIV each having different heights, the first TIV and the second TIV being electrically coupled to the first conductive trace and the second conductive trace, respectively.

20. The semiconductor device of claim 19 , wherein the first TIV and the second TIV are extending through the dielectric layer and arranged in a staggered manner viewed from above.