Thyristor Volatile Random Access Memory and Methods of Manufacture

1 . A volatile memory comprising:

a first plurality of row lines;

a second plurality of column lines; and

an array of vertical thyristors having anodes coupled to one of the row and column lines and having cathodes coupled to the other of the row and column lines.

2 . A volatile memory as in claim 1 wherein each vertical thyristor comprises:

a substrate of first conductivity type;

a buried layer of opposite conductivity type extending in a first direction to provide a cathode of the thyristor and a first column line;

a first layer of first conductivity type disposed on the buried layer to provide a first conductivity type base of the thyristor;

a second layer of opposite conductivity type disposed on the first layer to provide an opposite conductivity type base of the thyristor;

an upper layer of first conductivity type to provide an anode of the thyristor; and

a conductive layer coupled to the anode of the thyristor and extending in a second direction orthogonal to the first direction to provide a first row line.

3 . A volatile memory as in claim 2 further comprising:

a deep region of insulating material extending through the buried layer to the substrate in the first direction to separate columns of thyristors from each other; and

a shallow region of insulating material extending to the buried layer to separate rows of thyristors from each other.

4 . A volatile memory as in claim 3 wherein:

the substrate comprises silicon;

each of the a first layer, the second layer, and the upper layer comprise portions of an epitaxial silicon layer; and

each of the deep region and the shallow region comprise silicon dioxide.

5 . A volatile memory as in claim 4 wherein:

the first conductivity type is P; and

the opposite conductivity type is N.

6 . A volatile memory as in claim 1 further comprising an NMOS transistor coupled to the thyristor.

7 . A volatile memory as in claim 6 wherein:

each thyristor comprises a PNP transistor having an emitter, a base, and a collector, and an NPN transistor having an emitter, a base, and a collector;

the PNP emitter is coupled to the row line, the PNP base is coupled to the NPN collector, the PNP collector is coupled to the NPN base, and the NPN collector is coupled to the column line;

the NMOS transistor has one electrode provided by the NPN collector, another electrode provided by the NPN emitter, and a gate coupled to connect the NPN collector to the NPN emitter when the gate is on; and

the memory array includes gate lines coupled to the gates of a plurality of NMOS transistor gates.

8 . A volatile memory as in claim 7 wherein the gate lines extend parallel to the column lines.

9 . A volatile memory as in claim 1 further comprising an PMOS transistor coupled to the thyristor.

10 . A volatile memory as in claim 9 wherein:

each thyristor comprises a PNP transistor having an emitter, a base, and a collector, and an NPN transistor having an emitter, a base, and a collector;

the PNP emitter is coupled to the row line, the PNP base is coupled to the NPN collector, the PNP collector is coupled to the NPN base, and the NPN collector is coupled to the column line;

the PMOS transistor has one electrode provided by the PNP collector, another electrode provided by the PNP emitter, and a gate coupled to connect the PNP collector to the PNP emitter when the gate is on; and

the memory array includes gate lines coupled to the gates of a plurality of PMOS transistor gates.

11 . A volatile memory as in claim 7 wherein the gate lines extend parallel to the column lines.

12 . A method of making a volatile memory array having row lines, column lines, and an array of vertical thyristors having anodes coupled to one of the row and column lines and having cathodes coupled to the other of the row and column lines, the method comprising:

introducing opposite conductivity type dopant into a first conductivity type semiconductor substrate to thereby provide a buried layer providing a cathode for each of the vertical thyristors;

forming a first conductivity type epitaxial layer on the buried layer;

removing all of the epitaxial layer and the buried layer to expose portions of the substrate from a first plurality of parallel regions extending in a first direction of the memory array to thereby form a first plurality of deep trenches;

filling the first plurality of deep trenches with insulating material;

removing all of the epitaxial layer to expose portions of the buried layer from a second plurality of parallel regions extending in a second direction of the memory array to thereby form a second plurality of shallow trenches;

filling the second plurality of shallow trenches with insulating material;

introducing opposite conductivity type dopant into an upper portion of the epitaxial layer to form upper opposite conductivity type regions separated from the buried layer by a lower portion of the epitaxial layer; and

introducing first conductivity type dopant into a top portion of the upper opposite conductivity type regions to form an anode for each of the vertical thyristors.

13 . A method as in claim 11 further comprising a step of providing an electrical connection to the anode.

14 . A method as in claim 12 wherein the step of providing an electrical connection comprises:

introducing a refractory metal into the anode; and

annealing the anode to thereby form a metal silicide layer.

15 . A method as in claim 11 further comprising:

before the step of introducing first conductivity type dopant into a top portion of the upper opposite conductivity type regions, a step of forming a further epitaxial layer on an upper surface of the epitaxial layer; and

later providing electrical connections to the further epitaxial layer to provide connections to the anodes of the thyristors.

16 . A method of making a volatile memory array having row lines, column lines, and an array of vertical thyristors having anodes coupled to one of the row and column lines and having cathodes coupled to the other of the row and column lines, the method comprising:

introducing opposite conductivity type dopant into a first conductivity type semiconductor substrate to thereby provide a buried layer providing a cathode for each of the vertical thyristors;

forming a first epitaxial layer of first conductivity type on the buried layer;

forming a second epitaxial layer of opposite conductivity type on the first epitaxial layer;

removing all of the first and second epitaxial layers and the buried layer to expose portions of the substrate from a first plurality of parallel regions extending in a first direction of the memory array to thereby form a first plurality of deep trenches;

filling the first plurality of deep trenches with insulating material;

removing all of the of the first and second epitaxial layers to expose portions of the buried layer from a second plurality of parallel regions extending in a second direction of the memory array to thereby form a second plurality of shallow trenches;

filling the second plurality of shallow trenches with insulating material; and

introducing first conductivity type dopant into a top portion of the second epitaxial layer to form an anode for each of the vertical thyristors.

17 . A method as in claim 15 further comprising a step of providing an electrical connection to the anode.

18 . A method as in claim 16 wherein the step of providing an electrical connection comprises:

introducing a refractory metal into the anode; and

annealing the anode to thereby form a metal silicide layer.

19 . A method as in claim 15 further comprising:

before the step of introducing first conductivity type dopant into a top portion of the upper opposite conductivity type regions, a step of forming a further epitaxial layer on an upper surface of the second epitaxial layer; and

later providing electrical connections to the further epitaxial layer to provide connections to the anodes of the thyristors.