Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising forming a laminated film on a substrate by performing a cycle a predetermined number of times, the cycle comprising:

forming a first film which contains at least a predetermined element and oxygen by performing a first set a first preset number of times, the first set including non-simultaneously performing:

supplying a first precursor gas containing the predetermined element and carbon and having chemical bonds between the predetermined element and carbon to the substrate to form a first adsorption layer containing the predetermined element and carbon; and

supplying a first oxidizing gas to the substrate to oxidize the first adsorption layer and desorb the carbon from the first adsorption layer under a first oxidation condition such that the first film has a first carbon concentration; and

forming a second film which contains at least the predetermined element, oxygen and carbon by performing a second set a second preset number of times, the second set including non-simultaneously performing:

supplying a second precursor gas containing the predetermined element and carbon and having chemical bonds between the predetermined element and carbon to the substrate to form a second adsorption layer containing the predetermined element and carbon; and

supplying a second oxidizing gas to the substrate to oxidize the second adsorption layer and desorb the carbon from the second adsorption layer under a second oxidation condition and a non-plasma condition, the second oxidation condition being different from the first oxidation condition, such that the second film has a second carbon concentration higher than the first carbon concentration,

wherein the first film and the second film are laminated to form the laminated film.

2. The method of claim 1 , wherein the first film is a carbon-free film having a carbon concentration of zero.

3. The method of claim 1 , wherein a supply flow rate of the second oxidizing gas supplied under the second oxidation condition is set to be smaller than a supply flow rate of the first oxidizing gas supplied under the first oxidation condition.

4. The method of claim 1 , wherein a concentration of the second oxidizing gas supplied under the second oxidation condition is set to be lower than a concentration of the first oxidizing gas supplied under the first oxidation condition.

5. The method of claim 1 , wherein a supply time of the second oxidizing gas supplied under the second oxidation condition is set to be shorter than a supply time of the first oxidizing gas supplied under the first oxidation condition.

6. The method of claim 1 , wherein a pressure of a space in which the substrate exists when supplying the second oxidizing gas under the second oxidation condition is set to be lower than a pressure of the space in which the substrate exists when supplying the first oxidizing gas under the first oxidation condition.

7. The method of claim 1 , wherein the first oxidizing gas is different from the second oxidizing gas in material.

8. The method of claim 1 , wherein oxidation power of the first oxidizing gas is greater than oxidation power of the second oxidizing gas.

9. The method of claim 1 , wherein each of the first precursor gas and the second precursor gas contains at least one selected from a group consisting of an alkyl group, an alkylene group and an amino group.

10. The method of claim 1 , wherein the first precursor gas is different from the second precursor gas in material.

11. A method of manufacturing a semiconductor device, comprising forming a laminated film on a substrate by performing a cycle a predetermined number of times, the cycle comprising:

forming a first film which contains at least a predetermined element and oxygen by performing a first set a first preset number of times, the first set including non-simultaneously performing:

supplying a first precursor gas containing the predetermined element to the substrate to form a first adsorption layer containing the predetermined element; and

supplying a first oxidizing gas to the substrate to oxidize the first adsorption layer under a first oxidation condition, and

forming a second film which contains at least the predetermined element, oxygen and carbon by performing a second set a second preset number of times, the second set including non-simultaneously performing:

supplying a second precursor gas containing the predetermined element and carbon and having chemical bonds between the predetermined element and carbon to the substrate to form a second adsorption layer containing the predetermined element and carbon; and

supplying a second oxidizing gas to the substrate to oxidize the second adsorption layer and desorb the carbon from the second adsorption layer under a second oxidation condition and a non-plasma condition, the second oxidation condition being different from the first oxidation condition.

12. The method of claim 1 , wherein each of the first film and the second film has a thickness ranging from 0.1 nm to 5 nm.

13. The method of claim 1 , wherein the laminated film is a nano-laminated film composed of the first film and the second film alternately laminated at a nano scale thickness.

14. The method of claim 1 , wherein the first film is formed first in performing the cycle.

15. The method of claim 1 , wherein the first film is formed last in performing the cycle.

16. The method of claim 1 , wherein the first film has a carbon concentration of an impurity level.

17. The method of claim 1 , wherein the first film has a carbon concentration of substantially zero.