Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
1. A method for processing a substrate, comprising:
exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%; then
exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor; and then
exposing the surface of the substrate to second hydrogen radical species.
2. The method of claim 1 , further comprising:
after exposing the surface of the substrate to second hydrogen radical species, forming an epitaxial layer on the surface of the substrate, wherein the epitaxial layer has a concentration of germanium above about 70%.
3. The method of claim 1 , wherein the substrate has a concentration of germanium above about 70% at source and drain regions of the substrate.
4. The method of claim 1 , wherein the substrate comprises silicon germanium.
5. The method of claim 1 , wherein the fluorine-containing precursor comprises NF 3 and the hydrogen-containing precursor comprises NH 3 .
6. The method of claim 1 , wherein the first and second hydrogen radical species are formed using a HWCVD (hot wire chemical vapor deposition) source.
7. The method of claim 1 , wherein the surface of the substrate comprises contact plugs, vias, gate electrodes, elevated source/drains, source/drain extensions, channels, semiconductor features, or interconnect components.
8. The method of claim 1 , wherein the first and second hydrogen radical species are formed from an inductively coupled plasma or a capacitively coupled plasma.
9. The method of claim 1 , wherein the first and second hydrogen radical species are energized by a microwave source, energized by an RF source, or thermally formed.
10. A method for forming an epitaxial layer on a surface of a substrate, comprising:
removing native oxides or contaminants from the surface of the substrate by exposing the surface of the substrate to first hydrogen radical species, wherein the substrate has a concentration of germanium above 45% at source and drain regions of the substrate; then
cleaning the surface of the substrate using a fluorine-containing plasma etch process; then
exposing the surface of the substrate to second hydrogen radical species; and then
forming an epitaxial layer on the surface of the substrate, wherein the epitaxial layer has a concentration of germanium above about 70%.
11. The method of claim 10 , wherein the substrate comprises doped silicon, undoped silicon, polysilicon, crystalline silicon, silicon oxide, strained silicon, silicon germanium, doped or undoped polysilicon, germanium, sapphire (Al 2 O 3 ), silicon carbide (SiC), spinel, zinc oxide, gallium-arsenide (GaAs), lithium gallate, indium phosphide (InP), single-crystal GaN, aluminum nitride (AlN), GdScO 3 (GSO), MoSe 2 , Ge 2 Sb 2 Te 5 (GST), or combinations thereof.
12. The method of claim 10 , wherein the first and second hydrogen radical species are formed using a HWCVD (hot wire chemical vapor deposition) source.