Apparatuses and methods for charging a global access line prior to accessing a memory
Apparatuses and methods for charging a global access line prior to accessing a memory are described. An example apparatus may include a memory array of a memory. A plurality of global access lines may be associated with the memory array. The global access line may be charged to a ready-access voltage before any access command has been received by the memory. The global access line may be maintained at the ready-access voltage during memory access operations until the receipt of a post-access command. The post-access command may reset the global access line to an inactive voltage.
1. An apparatus comprising:
a memory array;
voltage circuitry configured to charge a global access line of the memory to a ready-access voltage before an access command is received to access the memory array; and
a control logic circuit configured to control the voltage circuitry to charge the global access line of the memory array responsive to receipt of a pre-access command, the control logic circuit further configured to control the voltage circuitry to charge the global access line of the memory array to an access voltage that is different than the ready-access voltage responsive to receipt of the access command.
2. The apparatus of claim 1 , further comprising:
a control logic circuit configured to provide a control signal to the voltage circuitry to charge the global access line of the memory array responsive to receipt of a pre-access command.
3. The apparatus of claim 1 , wherein the access command is an access read command.
4. The apparatus of claim 1 , wherein the voltage circuitry is configured to reset the global access line of the memory array to an inactive voltage responsive to receipt of a post-access command.
5. The apparatus of claim 1 , wherein the voltage circuitry is further configured to charge the global access line of the memory array to the ready-access voltage responsive to receipt of a pre-access command.
6. The apparatus of claim 1 wherein the voltage circuitry is further configured to adjust the ready-access voltage of the global access line of the memory array based on a temperature measurement of the memory array.
7. An apparatus comprising:
a memory array and
a control logic circuit configured to receive a first command, a second command, and a third command,
wherein the control logic circuit is configured to provide a first control signal to cause a global access line of the memory array to be charged to a ready-access voltage responsive to receipt of the first command,
wherein the control logic circuit is configured to provide second control signals to adjust the ready-access voltage of the global access line to an access voltage and to cause the memory array to be accessed using the access voltage responsive to receipt of the second command, and
wherein the control logic circuit is configured to provide a third control signal to cause the global access line of the memory array to reset from the access voltage to an inactive voltage responsive to receipt of the third command.
8. The apparatus of claim 7 , wherein the second command comprises a read access command.
9. The apparatus of claim 7 , wherein the apparatus further comprises a data cache configured to store data accessed responsive to receipt of the second command.
10. The apparatus of claim 7 , wherein a local access line of the memory is accessed responsive to receipt of the second command.
11. The apparatus of claim 7 , further comprising voltage circuitry configured to provide the ready-access voltage responsive to the first control signal from the control logic circuit.
12. The apparatus of claim 7 , further comprising an address buffer configured to provide an address to a row decoder and column decoder in order to access the memory array responsive to the second control signal from the control logic circuit.
13. The apparatus of claim 7 , further comprising a voltage generator and driver configured to reset the global access line to an inactive voltage responsive to the third control signal from the control logic circuit.
14. A method comprising:
charging a global access line of a memory to a ready-access voltage;
receiving a command after charging the global access line to the ready-access voltage; and
accessing the memory responsive to receipt of the command, wherein the global access line is charged to an access voltage form the ready-access voltage during memory access and is coupled to local access lines, and wherein a selected local access line is set to a higher voltage and an unselected local access line is set to a lower voltage.
15. The method of claim 14 , further comprising :
resetting the global access line to an inactive voltage following the memory access.
16. The method of claim 14 , wherein receiving a command comprises receiving a read access command and wherein accessing the memory comprises accessing the memory responsive to a control signal provided by a control logic circuitry responsive to receipt of the read access command.
17. The method of claim 14 , wherein the global access line is charged to a ready-access voltage responsive to receipt of a pre-access command.
18. The method of claim 14 , wherein during memory access, a selected global access line is driven to a voltage lower than the ready-access voltage.
19. The method of claim 14 , further comprising:
storing data from the memory following memory access.
20. The method of claim 14 , wherein charging the global access line to a ready-access voltage further comprises enabling voltage circuitry responsive to receipt of a pre-access command.
21. The method of claim 14 , further comprising:
receiving a different command after memory access is complete; and
resetting the global access line to an inactive voltage responsive to receipt of the different command.
22. The method of claim 21 , wherein the memory is accessed responsive to receiving an access command.
23. The method of claim 21 , wherein resetting the global access line to an inactive voltage further comprises enabling voltage circuitry to reset the global access line and a driver to an inactive voltage responsive to receipt of the command.
24. A method comprising:
receiving a first command;
charging a global access line of a memory to a ready-access voltage responsive to receipt of the first command;
receiving a second command; and
accessing the memory and adjusting the ready-access voltage of the global access line of the memory to a different voltage responsive to receipt of the second command.
25. The method of claim 24 , further comprising:
receiving a third command;
resetting the global access line to an inactive voltage responsive to receipt of the third command.
26. The method of claim 24 , further comprising:
adjusting the ready-access voltage of the global access line based on a measured temperature of the memory.